MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDFMA2P853T


Fairchild Semiconductor MOSFET MOSFETSchottky -20V Int. PCh PowerTrench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.4635
Multiples of: 1

3 A- 20 V120 mOhmsp - channel  - 55 C+ 150 C1.4 Wsmd/smtMICRO - FET - 6Reelsi1 channel8 V enhancement  
SISS4410DN-T1-GE3


MOSFETs N-Channel 40 V (D-S) MOSFET PowerPAK 1212-8S, 9 mohm a. 10V 9.6 mohm a. 7.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.4635
Multiples of: 1

36 A40 V9 mOhmsN - Channel 2.4 V- 55 C+ 150 C19.8 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V5.3 nCEnhancement  
IRFR220NPBF


Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.4636
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKTube       
DMT6010LFG-13


MOSFET 60V P-Ch Enh Mode 22Vgss 2090pF 41.3nC
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Diodes Incorporated 0
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AUD 0.4636
Multiples of: 3000

30 A60 V7.8 mOhmsN - Channel 2 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V41.3 nCEnhancement Powerdi
IRLR8726PBF


MOSFET N Trench 30V 86A 2.35V @ 50uA 5.8 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Infineon 0
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AUD 0.4641
Multiples of: 1

86 A30 V8 mOhmsN - Channel    75 WSmd/SmtDPAKTubeSi1 Channel20 V15 nC   
RU40120M


MOSFET N Trench 40V 120A (Tc) 4V @ 250uA 4.5 mΩ @ 60A,10V PDFN5060 RoHS
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Ruichips 0
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AUD 0.4641
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IRFU9120NPBF


MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC
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Infineon 0
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AUD 0.4642
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6.5 A100 V480 mOhmsP - Channel    39 WThrough HoleIPAKTubeSi1 Channel20 V18 nC   
IRF7478TRPBF


MOSFET N Trench 60V 7A 3V @ 250uA 26 mΩ @ 4.2A,10V SOIC-8_150mil RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.4642
Multiples of: 1

7.6 A60 V30 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V21 nC   
AOI4N60


Transistor: N-MOSFET; unipolar; 600V; 2.6A; 104W; TO251A
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Alpha & Omega 0
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AUD 0.4643
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WMO04N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 3A; 29W; TO252
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Wayon 0
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AUD 0.4643
Multiples of: 1

            Sj - Mosfet C2      
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