MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI5402BDC-T1-E3


MOSFET 30V 6.7A 2.5W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.4643

Multiples of: 1

4.9 A30 V35 mOhmsN - Channel20 V - 55 C+ 150 C1.3 WSmd/SmtCHIP - FET - 8Reel    Enhancement  
PH9030AL,115


MOSFET Trans MOSFET N-CH 30V 63A 5-Pin(4Tab)
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NXP 0
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AUD 0.4643

Multiples of: 1

61 A35 V11 mOhmsn - channel 2.45 V- 55 C+ 175 C46 Wsmd/smtLFPAK - 4Reel   8.7 nC   
SIB911DK-T1-GE3


MOSFET RECOMMENDED ALT 781-SIB457EDK-GE3
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Vishay 0
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AUD 0.4643

Multiples of: 1

1.5 A- 20 V295 mOhmsp - channel8 V - 55 C+ 150 C1.1 Wsmd/smtSC - 75 - 6Reel    enhancement  
FDS8433A


Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
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ON Semiconductor 0
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AUD 0.4645

Multiples of: 1

            powertrench®      
QN3120M6N


PRPAK(5x6) MOSFETs ROHS
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uPI Semiconductor 0
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AUD 0.4645

Multiples of: 1

                   
IRF9392TRPBF


Transistor: P-MOSFET; unipolar; -30V; -7.8A; 1.6W; SO8
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Infineon 0
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AUD 0.4646

Multiples of: 1

9.8 A30 V17.5 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel25 V14 nCEnhancement  
NTP2955G


MOSFET -60V -12A P-Channel
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ON Semiconductor 0
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AUD 0.4648

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2.4 A60 V196 mOhmsP - Channel 2 V- 55 C+ 175 C62.5 WThrough HoleTO - 220 - 3TubeSi1 Channel- 10 V14 nCEnhancement  
HY1906P


MOSFET N Trench 60V 120A 4V @ 250uA 7.5 mΩ @ 60A,10V TO-220FB RoHS
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HuaYi 0
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AUD 0.4648

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STN1NF10


MOSFET N-Ch 100 Volt 1 Amp
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STMicroelectronics 0
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AUD 0.4649

Multiples of: 1

1 A100 V800 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSOT - 223Reelsi1 channel20 V enhancement  
ZXM64P03XTA


P-Channel 30 V 3.8A (Ta) 1.1W (Ta) Surface Mount 8-MSOP
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Diodes Incorporated 0
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AUD 0.465

Multiples of: 1000

3.8 A30 V75 mOhmsP - Channel  - 55 C+ 150 C1.1 WSmd/SmtMSOP - 8Cut TapeSi1 Channel20 V Enhancement  
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