MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
S2M0040120K


1.2kV 1PCSNChannel TO-247-4 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SMC Diode 9
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 14.9

Multiples of: 1

                   
IPT60R125G7XTMA1


MOSFET HIGH POWER NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 9
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 15.0726

Multiples of: 1

20 A600 V108 mOhmsN - Channel 3 V- 55 C+ 150 C120 WSmd/SmtHSOF - 8ReelSi1 Channel20 V27 nCEnhancement  
STWA65N60DM6


MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 9
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 15.1837

Multiples of: 1

38 A600 V71 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel 61 nCEnhancement  
NVHL055N60S5F


MOSFET SUPERFET5 FRFET 55MOHM TO-247-3
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ON Semiconductor 9
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 15.2111

Multiples of: 1

                   
IRFBA1404PPBF


Transistor: N-MOSFET; unipolar; 40V; 206A; 300W; SUPER220
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Infineon 9
Ships to you
between Fri. 04 Sep to Wed. 09 Sep
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AUD 15.4585

Multiples of: 1

206 A40 V3.7 mOhmsN - Channel    300 WThrough HoleTO - 273AATubeSi1 Channel20 V160 nC   
STW42N60M2-EP


Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 9
Ships to you
between Fri. 04 Sep to Wed. 09 Sep
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AUD 15.8139

Multiples of: 1

            mdmesh      
STB14NK60ZT4


Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
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STMicroelectronics 9
Ships to you
between Fri. 04 Sep to Wed. 09 Sep
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AUD 16.089

Multiples of: 1

            Supermesh      
IXFR16N120P


MOSFET 16 Amps 1200V 1 Rds
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IXYS 9
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between Fri. 21 Aug to Thu. 27 Aug
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AUD 16.7373

Multiples of: 1

9 A1.2 kV1.04 Ohmsn - channel  - 55 C+ 150 C230 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
TK62N60W,S1VF


Toshiba MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
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Toshiba 9
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between Thu. 27 Aug to Mon. 31 Aug
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AUD 17.091

Multiples of: 1

61.8 A600 V33 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3ReelSi1 Channel30 V180 nC  Dtmosiv
IXTH3N150


MOSFET High Voltage Power MOSFET
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IXYS 7
Ships to you
between Thu. 27 Aug to Mon. 31 Aug
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AUD 16.6313

Multiples of: 1

3 A1.5 kV7.3 Ohmsn - channel     through holeTO - 247 - 3Tubesi1 channel     
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