MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN1R7-40YLDX


MOSFET PSMN1R7-40YLD/SOT669/LFPAK
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Nexperia 9
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AUD 4.8382
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SIDR638DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
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Vishay 9
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AUD 4.8957
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100 A40 V1.16 mOhmsN - Channel 2.3 V- 55 C+ 150 C125 WSmd/SmtPOWERPAK - SO - 8DC - 8Cut TapeSi1 Channel20 v , - 16 V63 nCEnhancement Trenchfet
FDMC007N08LCDC


MOSFET FET 80V 64A 6.8 mOhm
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ON Semiconductor 9
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AUD 4.9525
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64 A80 V6.8 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V44 nCEnhancement  
TPW65R044MFD


650V 72A 39mO@10V,36A 500W N Channel TO-247-3 MOSFETs ROHS
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UNIGROUP 9
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AUD 6.0043
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CSD16415Q5T


MOSFET 25-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm 8-VSON-CLIP -55 to 150
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Texas Instruments 9
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AUD 6.0579
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261 A25 V1.8 mOhmsN - channel 1.2 V- 55 C+ 150 C156 WSmd/smtVSON - CLIP - 8ReelSi1_Channel- 12 v to + 16 V21 nCEnhancement Nexfet
SiHG21N80AE-VB


800V 20A 205m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 9
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AUD 6.3736
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MS5N170FC


1.7kV 5A 160W 5.3@10V,3A 5V@250A 1 N-Channel TO-247 MOSFETs ROHS
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MASPOWER 9
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AUD 6.3815
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IXFT140N10P


MOSFET 140 Amps 100V 0.011 Rds
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IXYS 9
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AUD 6.9164
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140 A100 V11 mOhmsn - channel 5 V- 55 C+ 175 C600 Wsmd/smtTO - 268 - 3Tubesi1 channel20 V155 nCenhancement hiperfet
IPA057N06N3 G


MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
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Infineon 9
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AUD 6.9479
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60 A60 V4.6 mOhmsN - Channel 2 V- 55 C+ 175 C38 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V82 nCEnhancement Optimos
IXFH72N30X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 1
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AUD 5.8382
Multiples of: 1

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