MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMJ53N65F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
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Wayon 9
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AUD 7.1463
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            WMOS F2      
PSMN3R0-60PS,127


MOSFET, N-CH, 60V, 100A, TO-220AB
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Nexperia 9
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AUD 7.1964
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IXTA20N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 9
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AUD 7.3761
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IPB100N12S3-05


MOSFET MOSFET_(120V 300V)
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Infineon 9
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AUD 7.4469
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STW30N65M5


MOSFET POWER MOSFET N-CH 650V 22 A
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STMicroelectronics 9
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AUD 7.5224
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22 A650 V139 mOhmsN - Channel 5 V + 150 C140 WThrough HoleTO - 247TubeSi1 Channel3 V64 nC  Mdmesh
ALD110804SCL


MOSFET Quad N-Channel EPAD
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Advanced Linear Devices 9
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AUD 7.5385
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12 mA10 V500 Ohmsn - channel 380 mV0 C+ 70 C500 mW (1/2 w)smd/smtSOIC - 16Tubesi4 channel10.6 V enhancement  
IXFH36N60X3


MOSFET DISCRETE MOSFET 36A 600V X3 TO
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IXYS 9
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AUD 7.7657
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36 A600 V90 mOhmsN - Channel 5 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement HiPerFET
IRFSL4410ZPBF


Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
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Infineon 9
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AUD 7.8135
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            Hexfet®      
IPLU300N04S4-1R1


MOSFET MOSFET_(20V 40V)
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Infineon 9
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AUD 7.887
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IPP60R065S7-VB


600V 41A 62m@10V 4.5V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 9
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AUD 8.2854
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