MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF540STRLPBF


N-Channel 100 V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 10034
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AUD 1.6582
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   N - Channel  - 55 C+ 175 C Smd/SmtD2PAK - 2Reel       
IXFP5N100P


1kV 5A 2.8@10V,0.5A 250W 3V@250uA TO-220-3 MOSFETs ROHS
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Littelfuse 9
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AUD 8.5965
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BUK7S1R0-40HJ


MOSFET N-channel 40 V 1.0 mO standard level MOSFET in LFPAK88
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Nexperia 9
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AUD 9.8286
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325 A40 V1 mOhmsN - Channel 3 V- 55 C+ 175 C375 WSmd/SmtLFPAK88 - 4Reel 1 Channel10 V98 nCEnhancementAec - Q101 
IXFH110N25T


MOSFET 110 Amps 0V
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IXYS 9
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AUD 10.3819
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110 A250 V24 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel    Hiperfet
SCTWA10N120


MOSFET Silicon carbide Power MOSFET 1200 V 12 A 520 mOhm
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STMicroelectronics 9
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AUD 11.3612
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IPB90N06S404ATMA2


MOSFET N-Ch 60V 90A D2PAK-2
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Infineon 9
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AUD 12.6654
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90 A60 V3.7 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
AUIRF8739L2TR


MOSFET N-CHANNEL 30 / 40
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Infineon 9
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AUD 12.7531
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545 A40 V350 mOhmsN - Channel 2.2 V- 55 C+ 175 C340 WSmd/SmtDirectfet - L8Cut TapeSi1 Channel40 V562 nCEnhancementAec - Q101 
HC3M0045065K1


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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HXY MOS 9
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AUD 13.6577
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IPZ60R099C7


MOSFET HIGH POWER_NEW
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Infineon 9
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AUD 14.1119
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STF43N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 9
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AUD 14.283
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34 A650 V93 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3 Si1 Channel+/- 25 V56 nCEnhancement  
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