MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW6N90K5


MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package
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STMicroelectronics 9
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AUD 3.8539
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6 A900 V910 mOhmsN - Channel 3 V- 55 C+ 150 C110 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V11 nCEnhancement MDmesh
STFW3N170


MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
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STMicroelectronics 9
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AUD 4.0127
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   N - Channel       Tube 1 Channel     
IXTY14N60X2


N-Channel 600V 14A (Tc) 180W (Tc) Surface Mount TO-252
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IXYS 9
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AUD 5.4953
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14 A600 V250 mOhmsN - Channel 2.5 V- 55 C+ 150 C180 WSMD/SMTTO - 252TubeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
STD9N60M6


MOSFETs N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET
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STMicroelectronics 9
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AUD 4.0818
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SIR872ADP-T1-RE3


MOSFETs 150V Vds 20V Vgs PowerPAK SO-8
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Vishay 9
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AUD 4.1577
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PSMN1R5-25MLHX


MOSFET 25V N-CHANNEL LOGIC LEVEL
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Nexperia 9
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AUD 4.4951
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150 A25 V1.81 mOhmsN - Channel 2.2 V- 55 C+ 175 C106 WSMD/SMTLFPAK - 33 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancement  
STI24N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in an I2PAK package
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STMicroelectronics 9
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AUD 4.5582
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22 A600 V190 mOhmsN - Channel     Through HoleI2PAK - 3TubeSi1 Channel     
NTE2957


Transistor: N-MOSFET; 700V; 5A; TO220FN
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NTE 9
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AUD 4.6388
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AUIRF3805


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms
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Infineon 9
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AUD 4.8191
Multiples of: 1

210 A55 V2.6 mOhmsN - Channel20 V4 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V190 nCEnhancementAec - Q101 
VBP15R50S


MOSFET Super-247 RoHS
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VBsemi Elec 0
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AUD 3.8481
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