MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTF2955T1G


60V 7A 55mO@10V,3A 10.4W P Channel SOT-223-4 MOSFETs ROHS
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VBsemi Elec 191
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AUD 0.7919
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SWP10N65D


650V 10A TO-220 MOSFETs ROHS
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Sam&wing 141
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AUD 0.4789
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IPP65R420CFD


Infineon Technologies MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2
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Infineon 141
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AUD 1.2543
Multiples of: 1

8.7 A650 V420 mOhmsn - channel 4 V  83.3 Wthrough holeTO - 220 - 3Tubesi1 channel30 V32 nC  coolmos
STH160N4LF6-2


STMicroelectronics MOSFET
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STMicroelectronics 141
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AUD 1.806
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120 A40 V1.8 mOhmsN - Channel 1 V- 55 C+ 175 C150 WSmd/SmtH2PAK - 2Cut TapeSi1 Channel20 V181 nCEnhancement Stripfet
TK39N60W,S1VF(S


Trans MOSFET N-CH 600V 38.8A 3-Pin(3+Tab) TO-247
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Toshiba 141
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AUD 4.2178
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38.8 A  N    270 WThrough Hole      Enhancement  
IXTH1N250


IXYS MOSFET 1 Amps 2500V 40 Rds
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IXYS 141
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AUD 61.5343
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1.5 A2.5 kV40 Ohmsn - channel20 V2 V- 55 C+ 150 C250 Wthrough holeTO - 247 - 3Tubesi1 channel10 V41 nCenhancement  
20N06L TO252


60V 35A 31mO@10V,15A 3W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 131
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AUD 0.5652
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FDD770N15A-VB


150V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 129
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AUD 0.6853
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DMT10H010LK3-13


MOSFET MOSFET BVDSS 61V-100V
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Diodes Incorporated 76
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AUD 1.0873
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         Smd/SmtTO - 252 - 3Cut TapeSi      
NTTFD4D0N04HLTWG


MOSFET T8 40V DFN POWER CLIP 3X3 DUAL SYMMETRICAL
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ON Semiconductor 0
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AUD 3.8461
Multiples of: 1

60 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 150 C26 WSMD/SMTWQFN - 3X3 - 12Cut Tape , ReelSi2 Channel- 20 V , + 20 V18 nCEnhancement  
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