MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDP045N10A_F102


Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 145
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AUD 3.9571
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120 A100 V3.8 mOhmsN - Channel 4 V  263 WThrough HoleTO - 220 - 3 Si1 Channel20 V57 nC   
IXFA12N50P


MOSFET 500V 12A
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IXYS 145
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AUD 3.9567
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12 A500 V500 mOhmsN - Channel 5.5 V- 55 C+ 150 C200 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V29 nCEnhancement Hiperfet
IXTQ75N10P


MOSFET 75 Amps 100V 0.025 Rds
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IXYS 145
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AUD 5.0896
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75 A100 V21 mOhmsn - channel 5.5 V- 55 C+ 175 C360 Wthrough holeTO - 3P - 3Tubesi1 channel20 V74 nCenhancement polarht
SIHG47N60EF-GE3


Vishay Semiconductors MOSFET N-Channel 600V EF Series
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Vishay 145
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AUD 7.4893
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47 A600 V65 mOhmsN - Channel 2 V- 55 C+ 150 C379 WThrough HoleTO - 247 - 3ReelSi1 Channel+/- 30 V152 nCEnhancement Ef Series
STP30N65M5


STMicroelectronics MOSFET N-channel 650 V MDMesh
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STMicroelectronics 145
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AUD 9.1045
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22 A650 V125 mOhmsn - channel25 V - 55 C+ 150 C140 Wthrough holeTO - 220 - 3Tubesi1 channel25 V64 nC  mdmesh
APT5020BVRG


MOSFET Power MOSFET - MOS5
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Microchip 145
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AUD 14.6828
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         Through HoleTO - 247 - 3TubeSi      
IXFX78N50P3


MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET
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IXYS 145
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AUD 16.5164
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78 A500 V68 mOhmsn - channel 5 V  1.13 kWthrough holeTO - 247 - 3Tubesi1 channel30 V147 nC  hiperfet
IRFR024TRPBF-VB


- MOSFETs ROHS
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VBsemi Elec 144
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AUD 0.3786
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QM4002AD


40V 55A 12mO@10V,38.8A 100W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 144
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AUD 0.4298
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IXFH60N65X2


MOSFET MOSFET 650V/60A Ultra Junction X2
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IXYS 133
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AUD 10.2717
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60 A650 V52 mOhmsN - Channel 2.7 V- 55 C+ 150 C780 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V107 nCEnhancement Hiperfet
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