MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSA25N50MD


500V 25A 250m 1PCSNChannel TO-3P MOSFETs ROHS
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Truesemi 144
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 1.3627

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BSZ014NE2LS5IFATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 1.4661

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            Optimos 5      
IPA60R385CP


Infineon Technologies MOSFET N-Ch 600V 9A TO220FP-3 CoolMOS CP
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Infineon 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 1.4957

Multiples of: 1

9 A600 V385 mOhmsN - Channel20 V - 55 C+ 150 C31 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V17 nCEnhancement Coolmos
TK080N60Z1,S1F


MOSFETs 600V DTMOS6 TO-247 80mohm
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Toshiba 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 7.3716

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20 A600 V80 mOhmsN - Channel 4 V + 150 C211 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V43 nCEnhancement  
UJ4C075018K3S


N-Channel 750V 81A (Tc) 385W (Tc) Through Hole TO-247-3
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UnitedSiC 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 11.2986

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          TO - 247 - 3TubeSicfet (Cascode Sicjfet)      
IPW60R041C6FKSA1


Infineon Technologies MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6
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Infineon 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 12.7567

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77.5 A600 V37 mOhmsn - channel 2.5 V- 55 C+ 150 C481 Wthrough holeTO - 247 - 3Tubesi1 channel20 V290 nCenhancement coolmos
IXFX120N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 144
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 21.1463

Multiples of: 1

120 A300 V27 mOhmsn - channel 3 V- 55 C+ 150 C1.13 kWthrough holeTO - 247 - 3Tubesi1 channel20 V150 nCenhancement hiperfet
HSBB3072C


PRPAK-8(3x3) MOSFETs ROHS
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HUASHUO 143
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.515

Multiples of: 1

                   
Hot RD3P050SNTL1


MOSFET Nch 100V 5A TO-252(DPAK)
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ROHM 80
Ships to you
between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.5513

Multiples of: 1

5 A100 V135 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V14 nCEnhancement  
TPH8R80ANH,L1Q(M


SOP-8 MOSFETs ROHS
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Toshiba 47
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.7334

Multiples of: 1

                   
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