MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSD30350DN56G


30V 350A 104W 0.48mΩ@10V,20A 2.5V@250uA null DFN-8(5x6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Winsok 143
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AUD 1.8251
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IRFS4310ZTRLPBF-HXY


100V 260A 8.5m@10V,20A 379W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
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HXY MOS 142
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AUD 1.706
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WMPN40N50D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
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Wayon 142
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AUD 4.1582
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            WMOS D1      
CSD18501Q5A


N-Channel 40 V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 142
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AUD 4.2573
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161 A40 V3.2 mOhmsN - channel 1.4 V- 55 C+ 150 C150 WSmd/smtSONReelSi1 Channel10 V42 nCEnhancement Nexfet
PSMN1R2-80CSEJ


MOSFETs N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
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Nexperia 142
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AUD 5.0129
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375 A80 V1.18 mOhmsN - Channel 3.6 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V233 nCEnhancement  
IRFPW4468PBFXKSA1


MOSFETs StrongIRFET Power MOSFET, 100 V
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Infineon 142
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AUD 5.1388
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195 A100 V2.6 mOhmsN - Channel 4 V- 55 C+ 175 C517 WThrough HolePG - TO - 247 - 3TubeSi1 Channel+ 20 V363 nCEnhancement StrongIRFET
IXTH32N65X


MOSFET 650v/32A Power MOSFET
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IXYS 142
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AUD 10.2806
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32 A650 V135 mOhmsN - Channel 3 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V54 nCEnhancement Hiperfet
IXFH6N100


N-Channel 1000 V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 140
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AUD 10.0313
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6 A1 kV2 Ohmsn - channel  - 55 C+ 150 C180 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement hyperfet
WMJ020N10HGS


Transistor: N-MOSFET; unipolar; TO247-3
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Wayon 102
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AUD 4.2627
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APT7M120B


N-Channel 1200 V 8A (Tc) 335W (Tc) Through Hole TO-247 [B]
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Microchip 45
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AUD 7.9664
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8 A1.2 kV1.5 OhmsN - Channel30 V4 V- 55 C+ 150 C335 WThrough HoleTO - 247 - 3TubeSi 30 V80 nCEnhancement Power Mos 8
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