MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...19861987198819891990...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP7NK80ZFP


Transistor: N-MOSFET; unipolar; 800V; 3.3A; 30W; TO220FP
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STMicroelectronics 3880
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AUD 2.3498
Multiples of: 1000

            Supermesh      
FDH047AN08A0


MOSFET N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 171
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AUD 7.191
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247Tube       
IPW60R037CSFDXKSA1


MOSFET HIGH POWER_NEW
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Infineon 171
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AUD 8.7672
Multiples of: 1

           Tube       
IPQC60R017S7AXTMA1


MOSFETs AUTOMOTIVE_COOLMOS
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Infineon 171
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AUD 14.5955
Multiples of: 1

30 A600 V17 mOhmsN - Channel 4.5 V- 40 C+ 150 C500 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V196 nCEnhancement CoolMOS
TJ8S06M3L(T6L1,NQ)


Toshiba MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
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Toshiba 170
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AUD 0.9026
Multiples of: 1

8 A- 60 V104 mOhmsp - channel 2 V + 175 C27 Wsmd/smtTO - 252 - 3Reelsi1 channel- 10 V19 nCenhancement  
WMJ10N80D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
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Wayon 170
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AUD 1.3791
Multiples of: 1

            WMOS D1      
IPD90N04S4-02-VB


40V 130A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 170
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AUD 1.4578
Multiples of: 1

                   
DMP3021SSS-13


MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K
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Diodes Incorporated 170
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AUD 2.2212
Multiples of: 1

                   
SIR870DP-T1-GE3-VB


100V 100A 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 170
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AUD 2.6561
Multiples of: 1

                   
NVMFWS4D5N08XT1G


MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
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ON Semiconductor 156
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AUD 1.3364
Multiples of: 1

92 A80 V4.5 mOhmsN - Channel 3.6 V- 55 C+ 175 C82 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
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First...19861987198819891990...

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