MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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First...19861987198819891990...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMO80N08TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 173
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AUD 0.6875
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IRF730BPBF


Vishay Semiconductors MOSFET 400V 1ohm10V 5.5A NCh
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Vishay 173
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AUD 0.7158
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5.5 A400 V1 OhmsN - Channel 4 V- 55 C+ 150 C74 WThrough HoleTO - 220 - 3TubeSi 20 V38 nC   
TK35E08N1,S1X


Toshiba MOSFET 80V N-Ch PWR FET 55A 72W 25nC
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Toshiba 173
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AUD 0.9865
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55 A80 V12.2 mOhmsN - Channel    72 WThrough HoleTO - 220 - 3 Si1 Channel10 V25 nC   
SIRA06DP-T1-GE3


N-Channel 30 V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 173
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AUD 1.8916
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40 A30 V2.05 mOhmsN - Channel 1.1 V- 55 C+ 150 C62.5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 v , - 16 V77 nCEnhancement Trenchfet, Powerpak
IPB160N08S4-03


Infineon Technologies MOSFET N-CHANNEL 7580V
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Infineon 173
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AUD 2.6538
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160 A80 V2.6 mOhmsN - Channel 2 V- 55 C+ 175 C208 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V112 nCEnhancementAec - Q101 
IXFA10N60P


MOSFET 600V 10A
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IXYS 173
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AUD 3.9567
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10 A600 V740 mOhmsN - Channel  - 55 C+ 150 C200 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V Enhancement Hiperfet
C3M0120090D


Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
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Wolfspeed 173
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AUD 10.3937
Multiples of: 179

23 A900 V120 mOhmsN - Channel 2.1 V- 55 C+ 150 C97 WThrough HoleTO - 247 - 3TubeSic1 Channel 17.3 nCEnhancement  
IPW65R037C6


MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
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Infineon 173
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AUD 13.4463
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83.2 A650 V33 mOhmsN - Channel 2.5 V- 55 C+ 150 C500 WThrough HoleTO - 247TubeSi1 Channel20 V330 nCEnhancement Coolmos
IXFP72N30X3


MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP
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IXYS 173
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AUD 13.7075
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           Tube      Hiperfet
SIR106ADP-T1-RE3


MOSFET N-CHANNEL 100V PowerPAK SO-8
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Vishay 39
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AUD 1.8199
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65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel10 V26.5 nC , 34.5 nCEnhancement Trenchfet
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First...19861987198819891990...

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