MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...19811982198319841985...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA80R310CEXKSA2


MOSFET CONSUMER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 174
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AUD 2.2985
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16.7 A800 V250 mOhmsN - Channel 2.1 V- 40 C+ 150 C35 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V91 nCEnhancement Coolmos
IPW60R190C6FKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
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Infineon 174
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AUD 3.1368
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            Coolmos C6      
WMJ9N150D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
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Wayon 174
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AUD 8.5254
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            WMOS D1      
IPW65R035CFD7AXKSA1


MOSFET AUTOMOTIVE
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Infineon 174
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AUD 11.2955
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63 A650 V35 mOhmsN - Channel 4.5 V- 55 C+ 150 C305 WThrough HoleTO - 247 - 3Coolmos , TubeSi1 Channel- 20 V , + 20 V145 nCEnhancementAEC - Q101CoolMOS
SPW55N80C3FKSA1


MOSFET N-Ch 850V 54.9A TO247-3
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Infineon 174
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AUD 13.3582
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54.9 A800 V77 mOhmsN - Channel 2.1 V- 55 C+ 150 C500 WThrough HolePG - TO 247TubeSi1 Channel20 V288 nCEnhancement Coolmos
CEM9953A-VB


30V 7.3A 35m@10V 2 P-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 173
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AUD 0.3266
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IRF7321D2TRPBF


30V 7.3A 29mO@10V,7.3A 2 P-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 173
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AUD 0.3917
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SI7216DN-T1-E3-HXY


40V 20A 17m 2 N-Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 173
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AUD 0.4981
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SUD50N06-09L-E3-VB


60V 50A 10mΩ@10V null TO-252 MOSFETs ROHS
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VBsemi Elec 156
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AUD 0.6393
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IPW65R080CFDFKSA1


Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
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Infineon 72
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AUD 10.5177
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            Coolmos      
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First...19811982198319841985...

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