MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...19811982198319841985...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSD6023DN56


DFN-8L-EP2(5x6) MOSFETs ROHS
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Winsok 174
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AUD 0.4066
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VBA2625


MOSFET P Trench 60V 10A 3V @ 250uA 20 mΩ @ 20A,4.5V SO-8 RoHS
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VBsemi Elec 174
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AUD 0.7979
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STD90N4F3


40V 85A 5mO@10V,85A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 174
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AUD 0.9212
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IPA70R360P7S


700V 12.5A 360mO@10V,3A 26.5W N Channel TO-220FP-3 MOSFETs ROHS
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Infineon 174
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AUD 0.8499
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TK7A60W5,S5VX


MOSFET Power MOSFET N-Channel
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Toshiba 174
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AUD 1.3212
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7 A600 V540 mOhmsN - Channel 3 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V16 nCEnhancement  
IPAN70R450P7SXKSA1


Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP
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Infineon 174
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AUD 1.4
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            Coolmos P7      
NVD5C464NT4G


MOSFET T6 40V SL DPAK
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ON Semiconductor 174
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AUD 1.4217
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59 A40 V4.8 mOhmsN - Channel 2 V- 55 C+ 175 C40 WSmd/SmtDPAK - 4Cut TapeSi1 Channel20 V20 nCEnhancementAec - Q101 
HY3912W


125V 190A 6.3mΩ@10V,85A 349W 3V@250uA 465pF@25V N Channel 7.348nF@25V 185nC@10V +175℃@(Tj) TO-247A-3L MOSFETs ROHS
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HuaYi 174
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AUD 2.2333
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JMTE025N04D


40V 190A 197W 1.9m@10V,30A 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
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JieJie 171
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AUD 0.8757
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NTMFS0D7N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 165
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AUD 1.279
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323 A40 V700 uOhmsN - Channel 3.5 V- 55 C+ 175 C134 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V72.1 nCEnhancement  
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First...19811982198319841985...

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