MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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First...19861987198819891990...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISP670P06NMAXTSA1


MOSFETs SMALL SIGNAL MOSFETS
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Infineon 2105
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AUD 1.054
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6.4 A60 V67 mOhmsP - Channel 4 V- 55 C+ 150 C5 WSMD/SMTSOT - 223 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement  
SQ2351ES-T1_GE3


MOSFET P-Channel 20V AEC-Q101 Qualified
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Vishay 191
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AUD 0.4388
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3.2 A20 V80 mOhmsP - Channel 1.5 V- 55 C+ 175 C2 WSmd/SmtTO - 236 - 3Cut TapeSi1 Channel12 V5.5 nCEnhancementAec - Q101Trenchfet
IXTQ36N50P


MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
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IXYS 172
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AUD 12.9209
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36 A500 V170 mOhmsN - Channel 5 V- 55 C+ 150 C540 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V85 nCEnhancement Polarhv
7N65KL-MTQ-TM3-T


TO-251 MOSFETs ROHS
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Unisonic 171
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AUD 0.7602
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IPP086N10N3 G


MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
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Infineon 171
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AUD 0.9577
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80 A100 V8.2 mOhmsN - Channel  - 55 C+ 175 C125 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Optimos
SISH892BDN-T1-GE3


MOSFET 100V N-CHANNEL (D-S)
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Vishay 171
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AUD 1.5763
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20 A100 V30.4 mOhmsN - Channel 2.4 V- 55 C+ 150 C29 WSMD/SMTPOWERPAK - 1212 - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V17.4 nCEnhancement TrenchFET
AUIRFR8403TRL


Trans MOSFET N-CH 40V 127A Automotive 3-Pin(2+Tab) DPAK T/R
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Infineon 171
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AUD 1.7731
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100 A40 V2.4 mOhmsN - Channel    99 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel 66 nC Aec - Q101Coolirfet
WMJ15N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 15A; 150W
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Wayon 171
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AUD 5.0358
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            Sj - Mosfet M3      
IXFH20N100P


MOSFET 20 Amps 1000V 1 Rds
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IXYS 162
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AUD 15.3672
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20 A1 kV570 mOhmsn - channel 6.5 V- 55 C+ 150 C660 Wthrough holeTO - 247 - 3Tubesi1 channel30 V126 nCenhancement polar, hiperfet
IRFP150MPBF


MOSFET N Trench 100V 42A 4V @ 250uA 36 mΩ @ 23A,10V TO-247 (AC) RoHS
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Infineon 121
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AUD 1.4973
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42 A100 V36 mOhmsN - Channel    160 WThrough HoleTO - 247ACTubeSi1 Channel20 V73.3 nC   
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First...19861987198819891990...

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