MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP034NE7N3 G


MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
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Infineon 615
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AUD 1.9209
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100 A75 V3.4 mOhmsN - Channel 3.1 V- 55 C+ 175 C214 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V88 nC  Optimos
IXTH130N20T


MOSFET 130Amps 200V
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IXYS 208
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AUD 9.5552
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130 A200 V16 mOhmsn - channel 5 V- 55 C+ 175 C830 Wthrough holeTO - 247 - 3Tubesi1 channel30 V150 nCenhancement hiperfet
IXTH4N150


MOSFET High Voltage Power MOSFET
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IXYS 208
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AUD 10.1463
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4 A1.5 kV6 Ohmsn - channel     through holeTO - 247 - 3Tubesi      
S400N08TL


80V 400A 1.05m 4V 1PCSNChannel TOLL MOSFETs ROHS
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HL 207
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AUD 1.2914
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IXFP12N65X2


MOSFET 650V/12A TO-220
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IXYS 207
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AUD 4.6179
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12 A650 V310 mOhmsN - Channel 3 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V18.5 nCEnhancement Hiperfet
IXFA22N65X2


MOSFET MOSFET 650V/22A Ultra Junction X2
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IXYS 207
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AUD 5.3851
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22 A650 V160 mOhmsn - channel 2.7 V- 55 C+ 150 C360 Wsmd/smtTO - 263 - 3Tubesi1 channel30 V38 nCenhancement hiperfet
NTHL095N65S3H


MOSFET SUPERFET3 FAST 95MOHM TO-247-3
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ON Semiconductor 207
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AUD 7.9955
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30 A650 V95 mOhmsN - Channel 4 V- 55 C+ 150 C208 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V58 nCEnhancement  
WMB090NV6LG4


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 206
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AUD 0.4075
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AGM30P100A


30V 128A 3.7m@10V,30A 100W 1.6V@250uA 1PCSPChannel PDFN(5x6) MOSFETs ROHS
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AGM-Semi 206
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AUD 0.6365
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SIRA10DP-T1-GE3


N-Channel 30 V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 200
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AUD 0.7302
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60 A30 V2.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C40 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 16 v , 20 V51 nCEnhancement Trenchfet, Powerpak
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