MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRFP4368PBF


MOSFET N Trench 75V 195A 4V @ 250uA 1.85 mΩ @ 195A,10V TO-247 (AC) RoHS
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Infineon 1222
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 2.1106

Multiples of: 1

            Hexfet®      
IPW60R199CP


Infineon Technologies MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
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Infineon 211
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 3.2836

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16 A650 V199 mOhmsn - channel 2.5 V- 55 C+ 150 C139 Wthrough holeTO - 247 - 3Tubesi1 channel20 V43 nCenhancement coolmos
IPP65R099CFD7AAKSA1


MOSFET AUTOMOTIVE
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Infineon 211
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 4.6299

Multiples of: 1

24 A650 V99 mOhmsN - Channel 4.5 V- 55 C+ 150 C127 WThrough Hole Coolmos , TubeSi1 Channel- 20 V , + 20 V53 nCEnhancementAEC - Q101CoolMOS
IPW65R048CFDA


Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3
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Infineon 211
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 8.8164

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63.3 A650 V43 mOhmsN - Channel+/- 20 V4 V- 40 C+ 150 C500 WThrough HoleTO - 247 - 3Tube-1 Channel20 V270 nCEnhancement Coolmos
IXTH96N25T


MOSFET 96 Amps 250V 36 Rds
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IXYS 211
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between Wed. 05 Aug to Tue. 11 Aug
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AUD 9.7791

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96 A250 V29 mOhmsN - Channel  - 55 C+ 150 C625 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
FCH76N60NF


MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
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ON Semiconductor 211
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between Wed. 05 Aug to Tue. 11 Aug
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AUD 20.8489

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72.8 A600 V28.7 mOhmsn - channel  - 55 C+ 150 C543 Wthrough holeTO - 247Tubesi1 channel30 V   supremos frfet
FCMT299N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 210
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 3.5791

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12 A600 V299 mOhmsN - Channel 3.5 V- 55 C+ 150 C125 WSmd/SmtPOWER - 88 - 4ReelSi1 Channel20 V39 nC  Superfet Ii
IRFP064PBF


N-Channel 60 V 70A (Tc) 300W (Tc) Through Hole TO-247AC
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Vishay 210
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between Wed. 05 Aug to Tue. 11 Aug
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AUD 4.6806

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         Through HoleTO - 247 - 3TubeSi      
PSMN1R0-30YLC.115


Transistor: N-MOSFET; unipolar; 30V; 100A; 272W; PowerSO8
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Nexperia 208
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between Wed. 05 Aug to Tue. 11 Aug
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AUD 2.9463

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RSE80R850D


TO-252 MOSFETs ROHS
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REASUNOS 207
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.7185

Multiples of: 1

                   
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