MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB65R110CFD7ATMA1


MOSFET HIGH POWER_NEW
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Infineon 212
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AUD 3.5791
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22 A650 V110 mOhmsN - Channel 4.5 V- 55 C+ 150 C114 WSMD/SMTTO - 263 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V41 nCEnhancement  
DMP2900UFBQ-7B


MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
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Diodes Incorporated 211
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AUD 0.0786
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990 mA20 V1.5 OhmsP - Channel 1 V- 55 C+ 150 C1.11 WSMD/SMTX1 - DFN1006 - 3Reel , Cut TapeSi1 Channel- 6 V , + 6 V700 pCEnhancement  
FDS6890A-NL-VB


20V 7.1A 19mΩ@4.5V 2 N-Channel SOP8 MOSFETs ROHS
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VBsemi Elec 211
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AUD 0.3456
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AOD407


60V 30A 61mO@10V,30A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 211
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AUD 0.6093
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DMNH6021SPDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 211
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AUD 1.2642
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8.2 A60 V15 mOhmsN - Channel 1 V- 55 C+ 175 C2.8 WSmd/SmtPowerdi5060 - C - 8Cut TapeSi2 Channel20 V20.1 nC , 20.1 nCEnhancementAec - Q101 
TSA12N90M


900V 12A 1.1 1PCSNChannel TO-3P MOSFETs ROHS
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Truesemi 211
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AUD 1.6085
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CSD17579Q5AT


MOSFET 30V N-Channel NexFET Power MOSFET
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Texas Instruments 211
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AUD 1.797
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25 A30 V11.6 mOhmsN - Channel 1 V- 55 C+ 150 C36 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V5.4 nCEnhancement Nexfet
FDB070AN06A0


Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
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ON Semiconductor 211
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AUD 2.9851
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            Powertrench®      
ZXMN4A06GTA


N-Channel 40 V 5A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 153
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AUD 1.283
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7 A40 V50 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V18.2 nCEnhancement  
NVMFS5C638NLWFT1G


MOSFET 60V 3.0 MOHM T6 SO-8FL DUAL DFN-8
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ON Semiconductor 83
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AUD 2.5119
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133 A60 V3 mOhmsN - Channel 1.2 V- 55 C+ 175 C100 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V40.7 nCEnhancementAec - Q101 
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