MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP6A13FTA-VB


60V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 213
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AUD 0.2569
Multiples of: 5

                   
SWP085R68E7T


68V 75A TO-220 MOSFETs ROHS
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Sam&wing 213
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AUD 0.2583
Multiples of: 5

                   
BSO615NG


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 213
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AUD 0.27
Multiples of: 5

                   
WGF10N60SE


TO-220F MOSFETs ROHS
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Wild Goose 213
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AUD 0.3119
Multiples of: 5

                   
WMB35P04T1


Transistor: P-MOSFET; unipolar; PDFN5060-8
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Wayon 213
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AUD 0.3928
Multiples of: 1

                   
AGM4025Q


40V 110A 73.5W 2.2m@10V,20A 1.7V@250uA 1PCSNChannel PDFN5x6 MOSFETs ROHS
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AGM-Semi 213
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AUD 0.4844
Multiples of: 5

                   
IXTQ14N60P


MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
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IXYS 213
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AUD 4.909
Multiples of: 1

14 A600 V450 mOhmsn - channel 5.5 V- 55 C+ 150 C300 Wthrough holeTO - 3P - 3Tubesi1 channel30 V36 nCenhancement polarhv
IPZ65R095C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
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Infineon 213
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AUD 5.5737
Multiples of: 1

            Coolmos C7      
IXFH12N100F


MOSFET 12 Amps 1000V 1.05 Rds
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IXYS 213
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AUD 13.8731
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12 A1 kV1.05 OhmsN - Channel20 V - 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
ZXMP10A18K


100V 8.8A 250mO@10V,8.8A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 194
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AUD 0.6397
Multiples of: 1

                   
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