MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR5305TRPBF-HXY


60V 20A 72mΩ@10V,10A 2.5V P Channel TO252-2L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 213
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AUD 0.3315
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FDD6685


30V 40A 18mO@10V,40A P Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 212
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AUD 0.4908
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BSO033N03MSGXUMA1


Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
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Infineon 212
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AUD 1.0294
Multiples of: 1

            Optimos 3      
BSO201SPHXUMA1


Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
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Infineon 212
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AUD 1.0573
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   P Channel               
IPB80P04P4L06ATMA2


MOSFET MOSFET_20V 40V
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Infineon 212
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AUD 1.4973
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80 A40 V8.2 mOhmsP - Channel 1.7 V- 55 C+ 175 C88 WSMD/SMTTO - 263 - 3 - 2Cut Tape , ReelSi1 Channel- 16 V , + 5 V80 nCEnhancement  
P10F60HP2-5600


MOSFET Mosfet
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Shindengen 212
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AUD 1.609
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            Hi - Potmos2      
FDB9409-F085


MOSFET 40V 80A N-Chnl Power Trench MOSFET
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ON Semiconductor 212
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AUD 1.7481
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80 A40 V5.9 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V43 nCEnhancement  
IPAN80R280P7XKSA1


Transistor: N-MOSFET; unipolar; 800V; 10.6A; 30W; TO220FP
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Infineon 212
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AUD 2.1507
Multiples of: 1

            Coolmos P7      
CSD17577Q5A


Texas Instruments MOSFET 30V, N-channel NexFET Pwr MOSFET
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Texas Instruments 193
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AUD 0.622
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83 A30 V4.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C53 WSmd/SmtVSONP - 8ReelSi1 Channel10 V27 nCEnhancement Nexfet
TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay 115
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AUD 0.5024
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200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
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