MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN7R5-30MLDX


MOSFET 30V N-Channel 7.5mOhm
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Nexperia 209
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AUD 0.2299
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57 A30 V10.3 mOhmsN - Channel2.2 V2.2 V  45 WSmd/SmtLFPAK33 - 4ReelSi1 Channel2.2 V11.3 nCEnhancement  
IRFB3307ZPBF


MOSFET N Trench 75V 120A 4V @ 150uA 5.8 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 209
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AUD 1.1709
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120 A75 V4.6 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V79 nC   
IPB054N08N3 G


MOSFET OptiMOS 3 PWR TRANS 80V 80A
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Infineon 209
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AUD 1.5352
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80 A80 V4.6 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 263ReelSi1 Channel20 V69 nCEnhancement Optimos
IQE036N08NM6CGATMA1


MOSFETs OptiMOS 6 n-channel power MOSFET 80 V
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Infineon 209
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AUD 1.9045
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           Reel , Cut TapeSi     OptiMOS
IXTP2N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 209
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AUD 2.3478
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2 A650 V2.3 Ohmsn - channel 3 V- 55 C+ 150 C55 Wthrough holeTO - 220 - 3Tubesi 30 V4.3 nCenhancement hiperfet
STF21NM60ND


STMicroelectronics MOSFET N-Ch, 600V-0.17ohms FDMesh 17A
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STMicroelectronics 209
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AUD 4.991
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17 A600 V220 mOhmsn - channel25 V - 55 C+ 150 C30 Wthrough holeTO - 220 - 3Tubesi1 channel25 V enhancement  
RSJ650N10TL


MOSFET 4V Drive Nch MOSFET
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ROHM 209
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AUD 5.5657
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65 A100 V9.1 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi      
PSMN1R1-80CSFJ


MOSFETs PSMN1R1-80CSF/SOT8005A/CCPAK12
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Nexperia 209
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AUD 6.05
Multiples of: 1

385 A80 V1.16 mOhmsN - Channel 4 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V242 nCEnhancement  
IXTX170P10P


MOSFET -170.0 Amps -100V 0.012 Rds
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IXYS 209
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AUD 26.6463
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170 A100 V12 mOhmsp - channel   + 150 C890 Wthrough holePLUS - 247 - 3Tubesi 20 V    
APT20M16LFLLG


MOSFET FG, FREDFET, 200V, TO-264, RoHS
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Microchip 209
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AUD 38.9357
Multiples of: 1

            POWER MOS 7®      
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