MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC070N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8
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Infineon 1699
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 0.9555

Multiples of: 1

80 A100 V10.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C83 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V30 nCEnhancement Optimos
PSMN015-60BS,118


MOSFET N-CH 60 V 14.8 MOHM MOSFET
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Nexperia 615
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 0.9473

Multiples of: 1

50 A60 V14.8 mOhmsN - Channel 2 V- 55 C+ 175 C86 WThrough HoleD2PAKReelSi1 Channel10 V20.9 nCEnhancement  
CSD16342Q5A


N-Channel 25 V 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 225
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 1.2517

Multiples of: 1

60 A25 V5.5 mOhmsN - Channel 600 mV- 55 C+ 150 C3 WSMD/SMTVSONP - 8Reel , Cut TapeSi1 Channel- 8 V , 10 V6.5 nCEnhancement NexFET
IPA60R180C7XKSA1


MOS Power Transistors HV (>= 200V)
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Infineon 225
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 2.3548

Multiples of: 1

 600 V       Through HoleTO - 220FP - 3TubeSi     Coolmos
SIR804DP-T1-GE3


N-Channel 100 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 225
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between Tue. 04 Aug to Mon. 10 Aug
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AUD 2.4351

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60 A100 V7.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V50.8 nCEnhancement Trenchfet, Powerpak
CI90N120SM


TO-247-3 SiC MOSFETs ROHS
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Tokmas 225
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 8.2221

Multiples of: 1

                   
IXFP26N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 225
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 9.3582

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26 A500 V240 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi     Hiperfet
FCH041N65EFL4


MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET
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ON Semiconductor 225
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between Tue. 04 Aug to Mon. 10 Aug
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AUD 18.1437

Multiples of: 1

76 A650 V36 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 4Bulksi1 channel+/- 20 v , +/- 30 V298 nCenhancement superfet ii unifet frfet
FDMS86500L


MOSFET 60V N-Channel PowerTrench MOSFET
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ON Semiconductor 206
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 1.9442

Multiples of: 1

   N - Channel   + 150 C Smd/SmtPOWER 56Reel       
MP20N40


TO-220 MOSFETs ROHS
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Minos 68
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 0.4461

Multiples of: 1

                   
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