MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IPB027N10N5ATMA1


Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
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Infineon 1152
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AUD 3.5791
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            Optimos 5      
4N80L-TF3-T


MOSFET N Trench 800V 4A 5V @ 250uA 3 Ω @ 2A,10V TO-220F (TO-220IS) RoHS
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Unisonic 300
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AUD 0.6867
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PSMN1R1-80ASFJ


MOSFETs PSMN1R1-80ASF/SOT8000A/CCPAK12
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Nexperia 227
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AUD 6.05
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385 A80 V1.11 mOhmsN - Channel 4 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V242 nCEnhancement  
R6050JNZC17


MOSFET 600V 50A TO-3PF, PrestoMOS™ with integrated high-speed diode
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ROHM 227
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AUD 11.6075
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50 A600 V83 mOhmsN - Channel 7 V- 55 C+ 150 C120 WThrough HoleTO - 252 - 3TubeSi1 Channel- 30 V , + 30 V120 nCEnhancement  
IRLU120NPBF-VB


100V 15A 110m@10V 1PCSNChannel TO-251 MOSFETs ROHS
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VBsemi Elec 226
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AUD 0.4854
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DMP25H18DLFDE-7


Diodes Incorporated MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC
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Diodes Incorporated 226
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AUD 0.9851
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- 260 mA- 250 V10 OhmsP - Channel - 500 mV- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - 6ReelSi1 Channel40 V2.8 nCEnhancement  
IXFX40N90P


MOSFET Polar HiperFET Power MOSFET
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IXYS 226
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AUD 34.6746
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40 A900 V210 mOhmsN - Channel 6.5 V- 55 C+ 150 C960 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V230 nC  Hiperfet
SWF7N65DD


650V 7A 1.1Ω TO-220F MOSFETs ROHS
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Sam&wing 226
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AUD 0.3393
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WMO60N04T1


Transistor: N-MOSFET; unipolar; TO252
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Wayon 223
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AUD 0.3093
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HD6362


30V 100A 4mΩ@10V 2.5V null TO252-2L MOSFETs ROHS
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HXY MOS 212
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AUD 0.1584
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