MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDPF15N65


MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH
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ON Semiconductor 968
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AUD 3.21
Multiples of: 1

7 A650 V440 mOhmsN - Channel  - 55 C+ 150 C38.5 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement  
IRFS7730TRLPBF


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 623
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AUD 2.9388
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195 A75 V2.6 mOhmsN - Channel 3.7 V- 55 C+ 175 C375 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V271 nC  Strongirfet
WMO25P03TS


Transistor: P-MOSFET; unipolar; TO252
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Wayon 227
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AUD 0.2696
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MOT4719G


40V 30A 14m@10V,20A 20W 2.4V@250uA 1PCSPChannel PDFN5x6 MOSFETs ROHS
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MOT 227
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AUD 0.3365
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WMK06N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 5A; 50W
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Wayon 227
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AUD 0.7104
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            Sj - Mosfet M3      
AUP026N085


85V 247A 2.1m 275W 3V 1 N-Channel TO-220 MOSFETs ROHS
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ANHI 227
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AUD 1.2259
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IRF840LCSPBF


Vishay Semiconductors MOSFET N-Chan 500V 8.0 Amp
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Vishay 227
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AUD 2.3478
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8 A500 V850 mOhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3TubeSi1 Channel30 V Enhancement  
TK160F10N1,LQ(O


100V 375W 2m@10V,80A 1 N-Channel TO-220SM MOSFETs ROHS
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Toshiba 227
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AUD 1.7699
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IPA60R125C6


MOSFET N-Ch 600V 30A TO220FP-3 CoolMOS C6
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Infineon 227
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AUD 3.5955
Multiples of: 1

30 A600 V110 mOhmsN - Channel 2.5 V- 55 C+ 150 C34 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V96 nCEnhancement Coolmos
MSK100N03DF


DFN3X3-8L MOSFETs ROHS
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MSKSEMI 203
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AUD 0.3188
Multiples of: 5

                   
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