MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD22206W


MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection 9-DSBGA -55 to 150
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Texas Instruments 230
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AUD 0.6454
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5 A8 V9.1 mOhmsP - Channel 1.05 V- 55 C+ 150 C1.7 WSmd/SmtDSBGA - 9Cut TapeSi1 Channel- 6 V14.6 nCEnhancement Nexfet
SWP070R08E7T


80V 100A TO-220 MOSFETs ROHS
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Sam&wing 226
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AUD 0.3667
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SI4134DY-T1-E3


MOSFET 30V 14A 5.0W 14mohm @ 10V
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Vishay 226
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AUD 0.4367
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14 A30 V14 mOhmsN - Channel 1.2 V- 55 C+ 150 C5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V23 nCEnhancement TrenchFET
SI7228DN-VB


30V 28A 2 N-Channel DFN-8(3x3) MOSFETs ROHS
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VBsemi Elec 226
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AUD 0.5604
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WMJ4N150D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
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Wayon 226
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AUD 2.0478
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            WMOS D1      
NCE65T180T


650V 21A 150mO@10V,10.5A 188W N Channel TO-247-3 MOSFETs ROHS
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NCE Power 226
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AUD 2.7903
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WMB050N03LG4


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 225
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AUD 0.3155
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FDC5614P-NL-VB


60V 6.5A P Channel TSOP-6 MOSFETs ROHS
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VBsemi Elec 225
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AUD 0.3311
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SQ2361AEES-T1_BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 210
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AUD 0.4703
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           Cut Tape       
ZXMN3F30FHTA


N-Channel 30 V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 1
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AUD 0.326
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4.6 A30 V47 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
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