MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE80H12D


MOSFET TO-263 RoHS
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NCE Power 249
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AUD 0.9283
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IRFS3207TRLPBF


Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
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Infineon 249
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AUD 2.8685
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180 A75 V3.6 mOhmsN - Channel    330 WSmd/SmtD2PAKReelSi1 Channel20 V180 nC   
IXTP120N075T2


MOSFET 120 Amps 75V
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IXYS 241
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AUD 3.694
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120 A75 V7.7 mOhmsn - channel 4 V- 55 C+ 175 C250 Wthrough holeTO - 220 - 3Tubesi 20 V78 nCenhancement hiperfet
IRF5801TRPBF-VB


200V 4A N Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 240
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AUD 0.3945
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P42F6EN-5600


MOSFET 60V, 42A EETMOS POWER MOSFET
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Shindengen 240
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AUD 0.9612
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            EETMOS2      
TPM8580NHD56


PDFN-8L(5x6) MOSFETs ROHS
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TECH PUBLIC 240
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AUD 1.3609
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IPI80N06S407AKSA2


MOSFET MOSFET
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Infineon 240
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AUD 2.9045
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   N - Channel     Through HoleTO - 262 - 3TubeSi1 Channel   Aec - Q101 
IXTJ4N150


MOSFET High Voltage Power MOSFET
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IXYS 240
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AUD 13.7582
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2.5 A1.5 kV6 Ohmsn - channel 5 V- 55 C+ 150 C110 Wthrough holeTO - 247 - 3Tubesi 30 V44.5 nCenhancement  
FCH023N65S3-F155


MOSFET SuperFET3 650V 23 mOhm
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ON Semiconductor 240
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AUD 15.5012
Multiples of: 30

         Through HoleTO - 247 - 3 Si     Superfet Iii
IXFH15N100P


MOSFET 15 Amps 1000V 0.76 Rds
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IXYS 240
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AUD 16.9045
Multiples of: 1

15 A1 kV760 mOhmsn - channel 6.5 V- 55 C+ 150 C543 Wthrough holeTO - 247 - 3Tubesi1 channel30 V97 nCenhancement hiperfet
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