MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPS65R950C6


MOSFET N-Ch 700V 4.5A IPAK-3
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Infineon 242
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AUD 0.8991
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4.5 A650 V855 mOhmsN - Channel 2.5 V- 55 C+ 150 C37 WThrough HoleTO - 251 - 3TubeSi1 Channel20 V15.3 nCEnhancement Coolmos
TK4R3A06PL,S4X


MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W
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Toshiba 242
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AUD 1.6336
Multiples of: 1

68 A60 V3.3 mOhmsN - Channel 1.5 V + 175 C36 WThrough HoleTO - 220FP - 3 Si1 Channel20 V48.2 nCEnhancement  
SQJ418EP-T1_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 242
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AUD 1.6678
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48 A100 V11 mOhmsN - Channel 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V35 nCEnhancementAec - Q101 
IPP052N08N5AKSA1


Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
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Infineon 242
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AUD 1.7929
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            Optimos 5      
CSD17510Q5A


MOSFET 30V NChannel Lo Side NexFET Pwr MOSFET
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Texas Instruments 242
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AUD 1.9621
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100 A30 V7.3 mOhmsN - channel 1.5 V- 55 C+ 150 C3 WSmd/smtSON - 5ReelSi1 Channel20 V6.4 nC  Nexfet
CSD18542KCS


MOSFET 60V N-channel NexFET Power MOSFET
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Texas Instruments 242
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AUD 2.7791
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170 A60 V4 mOhmsN - Channel 1.5 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V44 nCEnhancement Nexfet
FDP038AN06A0


MOSFET 60V 80a .38 Ohms/VGS=1V
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ON Semiconductor 242
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AUD 4.0345
Multiples of: 50

80 A60 V3.8 mOhmsN - Channel 2 V- 55 C+ 175 C310 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V124 nCEnhancement PowerTrench
STP6N95K5


Transistor: N-MOSFET; unipolar; 950V; 6A; 90W; TO220-3
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STMicroelectronics 239
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AUD 2.6547
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            Supermesh      
NCE65TF180


650V 21A 160mO@10V,10.5A 188W N Channel TO-220 MOSFETs ROHS
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NCE Power 228
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AUD 2.2777
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CSD18532KCS


MOSFET 60-V N-Chanel NxFT Pwr MOSFETs
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Texas Instruments 212
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AUD 2.3542
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169 A60 V4.2 mOhmsN - Channel 1.5 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V44 nCEnhancement Nexfet
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