MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUMN08S5N012GAUMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 6586
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AUD 3.9567
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370 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C325 WSMD/SMTPG - HSOG - 4 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V149 nCEnhancement  
SIHG20N50E-GE3


Vishay Semiconductors MOSFET N-Channel 500V
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Vishay 242
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AUD 4.6903
Multiples of: 250

19 A500 V160 mOhmsN - Channel 2 V- 55 C+ 150 C179 WThrough HoleTO - 247AC - 3ReelSi1 Channel20 V46 nCEnhancement E Series
FQAF11N90C


Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
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ON Semiconductor 242
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AUD 5.4672
Multiples of: 1

            qfet®      
FQA170N06


Fairchild Semiconductor MOSFET 60V N-Channel QFET
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ON Semiconductor 242
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AUD 7.3927
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170 A60 V5.6 mOhmsn - channel25 V - 55 C+ 175 C375 Wthrough holeTO - 3P - 3Tubesi1 channel25 V enhancement qfet
AP9435K


35V 6.2A 50mO@10V,6.2A P Channel SOT-223-4 MOSFETs ROHS
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VBsemi Elec 241
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AUD 0.3186
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SP60N03GHTD


60V 140A 3.3m 1 N-Channel TO-263 MOSFETs ROHS
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Siliup 241
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AUD 0.4787
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SP015N06GHTQ


150V 140A 6.7m 1 N-Channel TO-220-3L MOSFETs ROHS
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Siliup 241
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AUD 1.4274
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WML6N100D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
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Wayon 241
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AUD 1.5045
Multiples of: 1

            WMOS D1      
IPP110N20N3GXKSA1


Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
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Infineon 240
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AUD 3.3
Multiples of: 1

            Optimos 3      
SIHB22N60E-GE3


MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
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Vishay 232
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AUD 5.0677
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21 A650 V180 mOhmsN - Channel 4 V- 55 C+ 150 C227 WSmd/SmtD2PAK (TO - 263)TubeSi1 Channel30 V57 nC   
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