MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD10NF06LT4-VB


60V 18.2A 73mΩ@10V N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 237
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AUD 0.3456
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NTD6416ANT4G


ON Semiconductor MOSFET NFET DPAK 100V 19A 96MO
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ON Semiconductor 237
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AUD 0.3994
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17 A100 V81 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel10 V20 nCEnhancement  
K2698


TO-3PNT MOSFETs ROHS
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OSEN 237
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AUD 0.6403
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PSMN1R4-100CSEJ


MOSFETs PSMN1R4-100CSE/SOT8005A/CCPAK1
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Nexperia 237
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AUD 5.5629
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340 A100 V1.42 mOhmsN - Channel 3.6 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V244 nCEnhancement  
IXFP60N25X3


MOSFET 250V/60A Ultra Junct ion X3-Class MOSFET
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IXYS 237
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AUD 11.3254
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60 A250 V19 mOhmsN - Channel 2.5 V- 55 C+ 150 C320 WThrough HoleTO - 220AB - 3TubeSi1 Channel20 V50 nCEnhancement Hiperfet
UM6K34NTCN


ROHM Semiconductor MOSFET
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ROHM 236
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AUD 0.1084
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200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel8 V Enhancement  
BUK9M20-40HX


MOSFET N-channel 40 V 20.0 m logic level MOSFET in LFPAK33
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Nexperia 215
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AUD 0.2725
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25 A40 V20 mOhmsN - Channel 1.5 V- 55 C+ 175 C38 WSmd/SmtLFPAK33 - 8 Si1 Channel16 V12.6 nCEnhancementAec - Q101 
IRFP4310ZPBF


MOSFET N Trench 100V 120A 4V @ 150uA 6 mΩ @ 75A,10V TO-247 (AC) RoHS
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Infineon 212
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AUD 1.8622
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134 A100 V4.8 mOhmsN - Channel    280 WThrough HoleTO - 247ACTubeSi1 Channel20 V120 nC   
IRF9530NS-VB


100V 10A 230mΩ@10V,10A P Channel TO-263-2 MOSFETs ROHS
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VBsemi Elec 198
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AUD 0.9238
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PSMN7R0-30YL,115


N-Channel 30 V 76A (Tc) 51W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 140
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AUD 0.7752
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76 A30 V7 mOhmsN - Channel 1.3 V- 55 C+ 175 C51 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel10 V22 nCEnhancement  
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