MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ110N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
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Infineon 67900
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AUD 0.8571
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            Optimos 5      
SWM20N65D


650V 20A 310mΩ TO-220MF MOSFETs ROHS
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Sam&wing 234
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AUD 1.0917
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IPA65R095C7


Infineon Technologies MOSFET HIGH POWER BEST IN CLASS
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Infineon 234
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AUD 4.5806
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12 A650 V84 mOhmsN - Channel 3 V- 55 C+ 150 C34 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V45 nCEnhancement Coolmos
IXFK98N50P3


MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET
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IXYS 234
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AUD 23.5925
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98 A500 V50 mOhmsn - channel 5 V  1.3 kWthrough holeTO - 264 - 3Tubesi1 channel30 V197 nC  hiperfet
DMN3024LSS-13


Diodes Incorporated MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
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Diodes Incorporated 233
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AUD 0.3891
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7.2 A30 V36 mOhmsN - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel20 V12.9 nCEnhancement  
IRF540ZPBF-HXY


100V 70A 8.5m 1PCSNChannel TO-220 MOSFETs ROHS
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HXY MOS 233
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AUD 0.7485
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SUP70101EL-GE3


MOSFET -100V Vds 20V Vgs TO-220AB
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Vishay 233
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AUD 2.6978
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120 A100 V11.4 mOhmsP - Channel 2.5 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V125 nCEnhancement  
IPW60R075CP


MOSFET COOL MOS N-CH 600V 0.075Ohms
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Infineon 233
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AUD 8.4881
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39 A600 V68 mOhmsN - Channel 2.5 V- 55 C+ 150 C313 WThrough HoleTO - 247TubeSi1 Channel20 V116 nCEnhancement Coolmos
SIHG039N60E-GE3


MOSFET 650V Vds; 30V Vgs TO-247AC
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Vishay 233
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AUD 11.166
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63 A600 V39 mOhmsN - Channel 3 V- 55 C+ 150 C357 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V126 nCEnhancement  
ISZ015N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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Infineon 224
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AUD 0.921
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177 A40 V1.4 mOhmsN - Channel 3.15 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel20 V37 nCEnhancement OptiMOS
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