MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH20N80P


MOSFET 20 Amps 800V 0.52 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 246
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AUD 10.7701
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20 A800 V520 mOhmsn - channel 5 V- 55 C+ 150 C500 Wthrough holeTO - 247 - 3Tubesi1 channel30 V86 nCenhancement hiperfet
S160N06T


60V 160A 2.4m 1PCSNChannel TO-220 MOSFETs ROHS
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HL 245
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AUD 0.4604
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SWM7N80D


800V 7A 1.5Ω TO-220MF MOSFETs ROHS
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Sam&wing 245
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AUD 0.8072
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AM20N15-250D-T1-PF-VB


150V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 245
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AUD 0.8461
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NVF3055L108T3G


ON Semiconductor MOSFET NFET 60V 3A 0.120R
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ON Semiconductor 245
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AUD 0.9555
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3 A60 V120 mOhmsN - Channel     Smd/SmtSOT - 223 - 3ReelSi1 Channel   Aec - Q101 
WMJ3N120D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
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Wayon 245
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AUD 1.3164
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            WMOS D1      
IPA60R099C7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 245
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AUD 4.8921
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 600 V       Through HoleTO - 220FP - 3TubeSi     Coolmos
IXFH26N60P


MOSFET 600V 26A
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IXYS 245
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AUD 12.7463
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26 A600 V270 mOhmsn - channel  - 55 C+ 150 C460 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hyperfet
WSD4062DN56


MOSFET N Trench 40V 62A (Tc) 2.5V @ 250uA 10.5 mΩ @ 20A,10V DFN5x6-8L RoHS
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Winsok 244
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AUD 0.2783
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IXTH30N50L2


MOSFET 30.0 Amps 500V 0.002 Rds
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IXYS 0
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AUD 23.3262
Multiples of: 1

30 A500 V200 mOhmsN - Channel 4.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V240 nCEnhancement Linear L2
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