MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4407A


30V 11.6A 12.5mO@10V,11.6A P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 252
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AUD 0.3943
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AGM403D1


40V 120A 105W 2.7m@10V,20A 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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AGM-Semi 247
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AUD 0.3224
Multiples of: 5

                   
2SK4212A-ZK-E1-AY-VB


30V 25.8A 5mΩ@10V,38.8A 3.75W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 247
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AUD 0.3456
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TK7A90E,S4X


MOSFET PLN MOS 900V 2000m VGS=10V TO-220SIS
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Toshiba 247
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AUD 1.2066
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7 A900 V1.6 OhmsN - Channel 4 V- 55 C+ 150 C45 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V32 nCEnhancement Mosviii
FQB34P10TM


Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
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ON Semiconductor 247
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AUD 2.2118
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   P Channel               
SPW11N80C3FKSA1


Infineon Technologies MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3
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Infineon 247
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AUD 2.4299
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11 A800 V390 mOhmsN - Channel 3 V- 55 C+ 150 C156 WThrough HoleTO - 247 - 3Tube- +/- 20 V64 nCEnhancement Coolmos
NTHL067N65S3H


MOSFET SUPERFET3 FAST 67MOHM TO-247-3
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ON Semiconductor 247
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AUD 5.7196
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40 A650 V67 mOhmsN - Channel 4 V- 55 C+ 150 C266 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V80 nCEnhancement  
SVF4N90F


TO-220F MOSFETs ROHS
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Silan 245
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AUD 0.834
Multiples of: 1

                   
IPA60R190C6


N-Channel 600 V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-3-111
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Infineon 244
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AUD 2.0851
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20.2 A600 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C34 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V63 nCEnhancement Coolmos
STD1NK60-1


Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK
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STMicroelectronics 1
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AUD 0.5327
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1 A600 V8 OhmsN - Channel 2.25 V- 55 C+ 150 C3 WThrough HoleTO - 251 - 3TubeSi1 Channel- 30 V , 30 V7 nCEnhancement  
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