MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMPB95ENEAX


MOSFET 80V single N-channel Trench MOSFET
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Nexperia 446
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AUD 0.2233
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4.1 A80 V80 mOhmsN - Channel 1.3 V- 55 C+ 150 C3.3 WSmd/SmtDfn2020md - 8ReelSi1 Channel20 V14.9 nCEnhancement  
PSMN9R8-30MLC,115


NXP Semiconductors MOSFET N-channel MOSFET logic level LFPAK33
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Nexperia 246
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AUD 0.2561
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50 A30 V12.4 mOhmsN - Channel    45 WSmd/SmtLFPAK - 4ReelSi1 Channel1.95 V    
HY1710P


MOSFET N Trench 100V 70A (Tc) 4V @ 250uA 18 mΩ @ 35A,10V TO-220FB-3L RoHS
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HuaYi 246
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AUD 0.455
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ITA16N65A


650V 16A 70W 490mΩ@10V,8A 4V@250uA N Channel TO-220F MOSFETs ROHS
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CRMICRO 246
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AUD 0.9154
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WMJ18N50D1B


Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
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Wayon 246
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AUD 1.214
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            WMOS D1      
STF17N80K5


MOSFET POWER MOSFET
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STMicroelectronics 246
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AUD 3.3
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14 A800 V340 mOhmsn - channel 3 V- 55 C+ 150 C30 Wthrough holeTO - 220FP - 3Tubesi1 channel+/- 30 V26 nCenhancement mdmesh
IPW60R125CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 246
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AUD 3.6119
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18 A600 V125 mOhmsN - Channel 3.5 V- 55 C+ 150 C92 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V36 nCEnhancement  
IPZA60R037P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
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Infineon 246
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AUD 9.8015
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            Coolmos P7      
DMTH43M8LK3-13


MOSFET MOSFETBVDSS: 31V-40V
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Diodes Incorporated 201
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AUD 0.6879
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100 A40 V2.9 mOhmsN - Channel 1 V- 55 C+ 175 C88 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V38.5 nCEnhancement  
FH32P03G6


30V PDFN-8L(3.3x3.3) MOSFETs ROHS
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Xinfeihong 96
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AUD 0.0927
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