MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS9933A-NL-VB


30V 7.3A 29mΩ@10V 2 P-Channel SOP8 MOSFETs ROHS
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VBsemi Elec 248
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AUD 0.3456
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IPD50R380CE


Trans MOSFET N-CH 500V 9.9A 3-Pin(2+Tab) TO-252 T/R
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Infineon 248
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AUD 0.731
Multiples of: 1

14.1 A500 V350 mOhmsN - Channel 2.5 V- 55 C+ 150 C98 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V24.8 nCEnhancement Coolmos
TJ20S04M3L(T6L1,NQ


Toshiba MOSFET P-Ch MOS -20A -40V 41W 1850pF 0.0222
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Toshiba 248
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AUD 0.8504
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20 A- 40 V22.2 mOhmsp - channel    41 Wsmd/smtTO - 252 - 3Reelsi1 channel     
DMG8N65SCT


MOSFET MOSFET BVDSS: 501V-650V
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Diodes Incorporated 248
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AUD 1.0163
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           Tube       
STL160N3LLH6


MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI
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STMicroelectronics 248
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AUD 2.8076
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160 A30 V1.1 mOhmsN - Channel 1 V  80 WSmd/SmtPowerflat 5X6ReelSi1 Channel20 V61.5 nC  Stripfet
SISA96DN-T1-GE3-HXY


30V 50A 7.5m 1PCSNChannel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 247
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AUD 0.1261
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DMN2040U-13


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K
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Diodes Incorporated 247
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AUD 0.1632
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6 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.36 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V7.5 nCEnhancement  
IPB020N10N5LF


Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
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Infineon 246
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AUD 10.235
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            Optimos 5      
AP2306AGN


30V 6.5A 30mO@10V,6.5A N Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 194
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AUD 0.1604
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IXFH110N25T


MOSFET 110 Amps 0V
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IXYS 9
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AUD 10.3819
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110 A250 V24 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel    Hiperfet
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