MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTA1N100P


MOSFET 1 Amps 1000V 14 Rds
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IXYS 252
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AUD 2.397
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1.2 A1 kV13 Ohmsn - channel  - 55 C+ 150 C50 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V enhancement  
IPW60R099CM8XKSA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 252
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AUD 3.4478
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29 A650 V99 mOhmsN - Channel 4.7 V- 55 C+ 150 C176 WThrough Hole TubeSi1 Channel20 V31 nCEnhancement CoolMOS
SPW47N65C3


MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms
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Infineon 252
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AUD 12.5433
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47 A650 V70 mOhmsN - Channel 2.1 V- 55 C+ 150 C415 WThrough HoleTO - 247TubeSi1 Channel10 V255 nCEnhancement Coolmos
NTMFS5H630NLT1G


60V 3.1m@20A,10V 2V@130uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
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ON Semiconductor 251
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AUD 2.6752
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NCE65T180F


MOSFET N Trench 650V 21A (Tc) 4V @ 250uA 180 mΩ @ 10.5A,10V TO-220F (TO-220IS) RoHS
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NCE Power 251
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AUD 2.3571
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NCE30H11BK


MOSFET TO-252-2L RoHS
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NCE Power 250
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AUD 0.2214
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BSP126.115


Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SOT223
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Nexperia 250
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AUD 0.9925
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UF3C120400K3S


MOSFET 1200V/400mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
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UnitedSiC 250
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AUD 9.0134
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SSM3J328R,LF(B


Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
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Toshiba 245
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AUD 0.2988
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IXTQ69N30P


MOSFET 69 Amps 300V 0.049 Rds
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IXYS 15
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AUD 9.5544
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69 A300 V49 mOhmsN - Channel  - 55 C+ 150 C500 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
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