MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KIA840SB


MOSFET N Trench 500V 8A 4V @ 250uA 900 mΩ @ 4A,10V TO-263-2 RoHS
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KIA 264
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AUD 0.5749
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WMO96N03T1


Transistor: N-MOSFET; unipolar; TO252
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Wayon 258
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AUD 0.3594
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IRF3205PBF


TO-220AB MOSFETs ROHS
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OSEN 258
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AUD 0.5777
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WGF20N70SE


TO-220F MOSFETs ROHS
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Wild Goose 258
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AUD 0.6583
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IRL1404ZPBF


Transistor: N-MOSFET; unipolar; 40V; 200A; 230W; TO220AB
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Infineon 258
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AUD 2.0099
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200 A40 V5 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V75 nC   
AO4404B-HXY


30V 8.5A 14m 1PCSNChannel SOP-8 MOSFETs ROHS
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HXY MOS 257
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AUD 0.0885
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AO3162


N-Channel 600 V 34mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3
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Alpha & Omega 257
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AUD 0.1686
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IXTX110N20L2


MOSFET LINEAR L2 SERIES MOSFET 200V 110A
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IXYS 243
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AUD 48.3179
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110 A200 V24 mOhmsn - channel 4.5 V- 55 C+ 150 C960 Wthrough holePLUS - 247 - 3Tubesi 20 V500 nCenhancement linearl2
IXFH36N60P


MOSFET 600V 36A
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IXYS 73
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AUD 13.6761
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36 A600 V190 mOhmsn - channel  - 55 C+ 150 C650 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
ISC030N12NM6ATMA1


MOSFETs N
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Infineon 54
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AUD 3.6119
Multiples of: 1

194 A120 V3.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V59 nCEnhancement OptiMOS
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