MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIZ980BDT-T1-GE3


MOSFET N-CHANNEL 30-V D-S PowerPAIR 6 x 5
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 272
Ships to you
between Tue. 18 Aug to Fri. 21 Aug
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AUD 1.3573

Multiples of: 1

54.8 A , 197 A30 V4.39 mOhms , 1.06 mOhmsN - Channel 1.2 V , 1.1 V- 55 C+ 150 C20 W , 66 WSMD/SMTPowerpair - 6X5 - 8Reel , Cut TapeSi2 Channel- 16 V , 20 V18 nC , 79 nCEnhancement  
IXFA130N10T2


MOSFET Trench T2 HiperFET Power MOSFET
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IXYS 257
Ships to you
between Mon. 10 Aug to Wed. 12 Aug
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AUD 5.1224

Multiples of: 1

130 A100 V9.1 mOhmsN - Channel     Smd/SmtTO - 263 - 3TubeSi1 Channel    Hiperfet
IPD70R900P7S


MOSFET CONSUMER
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Infineon 256
Ships to you
between Tue. 18 Aug to Fri. 21 Aug
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AUD 0.5845

Multiples of: 1

                   
SI4100DY-T1-E3


Vishay Semiconductors MOSFET 100V 6.8A 6.0W
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Vishay 256
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 0.8488

Multiples of: 1

4.4 A100 V63 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi 20 V Enhancement Trenchfet
IRF7700TRPBF


MOSFET MOSFT PCh -20V A mOhm 59nC
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Infineon 256
Ships to you
between Mon. 10 Aug to Wed. 12 Aug
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AUD 1.3308

Multiples of: 1

8.6 A20 V15 mOhmsP - Channel 1.2 V + 150 C1.5 WSmd/SmtTSSOP - 8ReelSi1 Channel 89 nC   
WSR200N08


MOSFET N Trench 80V 200A (Tc) 4V @ 250uA 3.5 mΩ @ 100A,10V TO-220 (TO-220-3) RoHS
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Winsok 256
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 1.5241

Multiples of: 1

                   
IPP17N25S3100AKSA1


Infineon Technologies MOSFET N-Ch 250V 17A TO220-3
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Infineon 256
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 2.1672

Multiples of: 1

17 A250 V100 mOhmsN - Channel 3 V- 55 C+ 175 C107 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V14 nCEnhancementAec - Q101 
WMK053N10HGS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 250
Ships to you
between Tue. 04 Aug to Mon. 10 Aug
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AUD 0.9299

Multiples of: 1

                   
TK9J90E,S1E


Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
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Toshiba 242
Ships to you
between Tue. 18 Aug to Fri. 21 Aug
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AUD 2.2092

Multiples of: 1

9 A900 V1 OhmsN - Channel30 V4 V- 55 C+ 150 C250 WThrough HoleTO - 3P - 3ReelSi1 Channel10 V46 nCEnhancement  
FDMC007N08LCDC


MOSFET FET 80V 64A 6.8 mOhm
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ON Semiconductor 9
Ships to you
between Tue. 18 Aug to Fri. 21 Aug
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AUD 4.9525

Multiples of: 1

64 A80 V6.8 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V44 nCEnhancement  
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