MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS6H850NLTAG


MOSFET 80V 108A 8.66mOhm Single N-Channel
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ON Semiconductor 254
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AUD 0.6994
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64 A80 V8.6 mOhmsN - Channel 2 V- 55 C+ 175 C73 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V26 nCEnhancement  
RS65R380D


TO-252 MOSFETs ROHS
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REASUNOS 254
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AUD 0.7014
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APG050N85D


85V 135A 4.5mΩ@20V,135A null TO-263 MOSFETs ROHS
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Quan Li 254
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AUD 1.4476
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IXTY4N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 254
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AUD 2.2821
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4 A650 V850 mOhmsN - Channel 3 V- 55 C+ 150 C80 WSmd/SmtTO - 252 - 3TubeSi 30 V8.3 nCEnhancement Hiperfet
SPP15N60C3XKSA1


Infineon Technologies MOSFET N-Ch 650V 15A TO220-3
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Infineon 254
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AUD 4.2358
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15 A650 V280 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Coolmos
IXFH18N100Q3


N-Channel 1000 V 18A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 254
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AUD 24.5612
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18 A1 kV660 mOhmsn - channel   + 150 C830 Wthrough holeTO - 247 - 3Tubesi1 channel30 V90 nC  hiperfet
RS65R280F


650V 15A 34W 280mΩ@10V,7.5A null TO-220F MOSFETs ROHS
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REASUNOS 253
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AUD 0.9071
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SWP046R08E9T


80V 160A 4.5mΩ TO-220 MOSFETs ROHS
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Sam&wing 243
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AUD 0.6778
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RSF60R099F


TO-220F MOSFETs ROHS
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REASUNOS 241
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AUD 2.2787
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AUIRFP4568-E


MOSFET MOSFET_120V 300V
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Infineon 175
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AUD 12.7099
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         Through HoleTO - 247 - 3TubeSi    Aec - Q101 
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