MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7313PBF-HXY


30V 6A 25m 2 N-Channel SOP-8 MOSFETs ROHS
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HXY MOS 260
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AUD 0.7072
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WMM15N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
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Wayon 260
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AUD 1.3164
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            WMOS C4      
HSP100N15


150V 100A 178W 7.3mΩ@10V,20A 3V@250uA N Channel TO-220 MOSFETs ROHS
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HUASHUO 260
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AUD 1.3613
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AUR020N10


TOLL-8L MOSFETs ROHS
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ANHI 260
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AUD 1.5577
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P12F60HP2-5600


MOSFET High Switching Speed High Voltage
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Shindengen 260
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AUD 1.5881
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            Hi - Potmos2      
TK7A80W,S4X


MOSFET PWR MOSFET PD=35W F=1MHZ
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Toshiba 260
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AUD 2.3462
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6.5 A800 V950 mOhmsN - Channel 3 V- 55 C+ 150 C35 WThrough HoleTO - 220SIS - 3TubeSi1 Channel10 V13 nCEnhancement Dtmosiv
SP000750498


MOSFET P-Ch -20V -630mA SOT-323-3
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Infineon 259
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AUD 0.0694
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630 mA20 V379 mOhmsP - Channel 1.2 V- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V- 1.3 nCEnhancement  
NTNS0K8N021ZTCG


N-Channel 20 V 220mA (Ta) 125mW (Ta) Surface Mount 3-XDFN (0.42x0.62)
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ON Semiconductor 259
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AUD 0.163
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220 mA20 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C125 mWSMD/SMTXDFN - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V-Enhancement  
IRFP064N


TO-247S MOSFETs ROHS
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OSEN 160
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AUD 0.7741
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Hot IRFR7440TRPBF


MOSFET N Trench 40V 90A 3.9V @ 100uA 2.4 mΩ @ 90A,10V TO-252-2 (DPAK) RoHS
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Infineon 67
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AUD 0.9039
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90 A40 V2.4 mOhmsN - Channel 2.2 v to 3.9 V- 55 C+ 175 C140 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V89 nCEnhancement Strongirfet
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