MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPTC012N06NM5ATMA1


MOSFETs N
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Infineon 2467
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AUD 2.5612
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311 A60 V1.2 mOhmsN - Channel 2.1 V- 55 C+ 175 C214 WSMD/SMTHDSOP - 16Reel , Cut Tape 1 Channel- 20 V , + 20 V106 nCEnhancement  
AUIRFS8408


MOSFET Auto 40V N-Ch FET 1.3mOhm 195A
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Infineon 259
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AUD 2.3787
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195 A40 V1.6 mOhmsn - channel20 V2.2 v to 3.9 V- 55 C+ 175 C294 Wsmd/smtDPAK - 2Tubesi1 channel20 V210 nCenhancement coolirfet
IPW65R060CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 259
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AUD 6.3537
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           Tube       
IXTQ52N30P


MOSFET 52 Amps 300V 0.066 Ohm Rds
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IXYS 259
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AUD 7.1254
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52 A300 V66 mOhmsN - Channel  - 55 C+ 150 C400 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
IXFP38N30X3M


MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP
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IXYS 259
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AUD 7.5851
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           Tube      Hiperfet
IXTP60N20X4


MOSFET 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
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IXYS 259
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AUD 11.7552
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60 A200 V21 mOhmsN - Channel 4.5 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V11 nCEnhancement X4 - Class
IRF730ASTRLPBF


Vishay Semiconductors MOSFET N-Chan 400V 5.5 Amp
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Vishay 258
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AUD 1.6418
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5.5 A400 V1 OhmsN - Channel  - 55 C+ 150 C74 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V Enhancement  
IXFH46N65X3


MOSFET DISCRETE MOSFET 46A 650V X3 TO
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IXYS 258
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AUD 9.6731
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46 A650 V73 OhmsN - Channel 5.2 V- 55 C+ 150 C520 WThrough Hole TubeSi1 Channel- 20 V , + 20 V40 nCEnhancement  
IXFX26N120P


MOSFET 32 Amps 1200V 0.46 Rds
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IXYS 258
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AUD 47.1358
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26 A1.2 kV500 mOhmsn - channel 6.5 V- 55 C+ 150 C960 Wthrough holeTO - 247 - 3Tubesi1 channel30 V255 nCenhancement hiperfet
IXFX64N60P3


MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
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IXYS 249
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AUD 16.5164
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64 A600 V95 mOhmsN - Channel 5 V- 55 C+ 150 C1.13 kWThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V145 nCEnhancement HiPerFET
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