MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD42DP15LMATMA1


150V 420mO@8.2A,10V P Channel TO-252-3 MOSFETs ROHS
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Infineon 7598
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AUD 1.0081
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9 A150 V420 mOhmsP - Channel 2 V- 55 C+ 175 C83 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V43 nCEnhancement  
AGM1010A2


100V 74A 7.8m@10V,20A 96W 1.6V@250uA 1PCSNChannel PDFN(5x6) MOSFETs ROHS
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AGM-Semi 325
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AUD 0.5531
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SE100130G


TO-263 MOSFETs ROHS
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SINO-IC 324
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AUD 0.4753
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CSD25202W15


Texas Instruments MOSFET 20V P-channel NexFET Pwr MOSFET
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Texas Instruments 323
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AUD 0.9607
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4 A20 V52 mOhmsP - Channel 1.05 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtDSBGA - 9ReelSi1 Channel- 6 V7.5 nCEnhancement Nexfet
SI2307-TP


MOSFET P-Channel MOSFET, SOT-23 package
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Micro Commercial Components (MCC) 323
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AUD 0.2069
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2.7 A30 V73 mOhmsP - Channel 3 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V6.2 nCEnhancement  
HSH110P04


40V 110A 5.3mΩ@10V,20A 200W 2.5V@250uA P Channel TO-263 MOSFETs ROHS
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HUASHUO 323
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AUD 0.6141
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STS2DNF30L


MOSFET N-Ch 30 Volt 3 Amp
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STMicroelectronics 322
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AUD 0.3579
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3 A30 V90 mOhmsN - Channel18 V - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi2 Channel18 V Enhancement Stripfet
OSH20N65C


650V 20A 220W 350m TO-3PNB MOSFETs ROHS
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OSEN 322
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AUD 0.833
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2SK3878(STA1,E,S)


Toshiba
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Toshiba 290
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AUD 3.0998
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IXTQ88N30P


MOSFET 88 Amps 300V 0.04 Rds
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IXYS 72
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AUD 10.7893
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88 A300 V40 mOhmsN - Channel  - 55 C+ 150 C600 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
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