MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF4N90C


mosfet n trench 900v 4a 5v @ 250ua 4.2 @ 2a,10v to-220f (to-220is) rohs
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ON Semiconductor 1085
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AUD 1.536
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NCEP080N10


TO-220 MOSFETs ROHS
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NCE Power 324
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AUD 0.9341
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WGA20N50SE


TO-3P MOSFETs ROHS
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Wild Goose 324
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AUD 0.9557
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AUIRLR3410TR


Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; DPAK
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Infineon 324
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AUD 1.884
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17 A100 V105 mOhmsN - Channel16 V2 V- 55 C+ 175 C79 WSmd/SmtDPAK - 3Reel   34 nCEnhancement  
IMZA65R039M1HXKSA1


MOSFET SILICON CARBIDE MOSFET
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Infineon 324
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AUD 9.6045
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50 A650 V50 mOhmsN - Channel 5.7 V- 55 C+ 175 C176 WThrough HoleTO - 247 - 4TubeSiC1 Channel- 5 V , + 23 V41 nCEnhancement  
TPM10013PHK3-3


TO-252 MOSFETs ROHS
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TECH PUBLIC 323
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AUD 0.3996
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HYG180N10LS1B


TO-263-2L MOSFETs ROHS
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HuaYi 323
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AUD 0.437
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SI4056ADY-T1-GE3


N-Channel 100V 5.9A (Ta), 8.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
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Vishay 321
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AUD 1.7238
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8.3 A100 V29.2 mOhmsN - Channel 2.5 V- 55 C+ 150 C5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V19.2 nCEnhancement TrenchFET
VBE1302


MOSFET N Channel 30V 120A(Tc) 2.5V @ 250uA 2.3mO @ 38.8A,10V TO252 RoHS
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VBsemi Elec 271
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AUD 1.2875
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HSU100P04


40V 100A 52.1W 4.6mΩ@10V,20A 1.8V@250uA 722pF@20V P Channel 7090pF@20V 115nC@10V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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HUASHUO 117
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AUD 0.8811
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