MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SP010N03AGHTO


100V 240A 2.4m 1 N-Channel TOLL MOSFETs ROHS
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Siliup 335
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AUD 0.9311
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BSC019N04NS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 328
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AUD 0.6452
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29 A40 V1.9 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IPB60R600CP


MOSFET COOL MOS PWR TRANS MAX 650V
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Infineon 328
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AUD 1.2862
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6.1 A600 V600 mOhmsN - Channel 3.5 V- 55 C+ 150 C60 WSmd/SmtTO - 263ReelSi1 Channel20 V21 nCEnhancement Coolmos
IPB180N03S4L-01


Infineon Technologies MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
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Infineon 328
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AUD 2.8731
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180 A30 V1.05 mOhmsN - Channel  - 55 C+ 175 C188 WSmd/SmtTO - 263 - 7ReelSi1 Channel16 V187 nC Aec - Q101Optimos
AUIRFS3607


Transistor: N-MOSFET; unipolar; 75V; 56A; 140W; D2PAK
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Infineon 328
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AUD 3.4515
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            Hexfet®      
IPZA60R070CM8XKSA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 327
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AUD 4.4493
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37 A600 V70 mOhmsN - Channel 4.7 V- 55 C+ 150 C201 WThrough HolePG - TO247 - 4TubeSi1 Channel- 20 V to + 20 V43 nCEnhancement CoolMOS
WMS14P03T1


Transistor: P-MOSFET; unipolar; SOP8
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Wayon 326
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AUD 0.349
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WSD19N10DN56


100V 15A 110mΩ@4.5V,15mA 20V N Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 326
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AUD 0.457
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IPP60R360CFD7XKSA1


MOSFET LOW POWER_NEW
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Infineon 326
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AUD 1.2346
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           Tube       
NTP055N65S3H


MOSFET FAST 650V TO220
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ON Semiconductor 306
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AUD 3.2904
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47 A650 V55 mOhmsN - Channel 4 V- 55 C+ 150 C305 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V96 nCEnhancement SuperFET III
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