MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
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MOSFET N-Ch 30V30V 40A40A TISON-8
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Infineon 338
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AUD 0.6839
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40 A30 V3.8 mOhms , 2.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSMD/SMTTISON - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V10 nC , 18.4 nCEnhancement OptiMOS
OSP33N10


TO-220 MOSFETs ROHS
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OSEN 329
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AUD 0.2712
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FQPF7N80C


Fairchild Semiconductor MOSFET 800V N-Ch Q-FET advance C-Series
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ON Semiconductor 329
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AUD 1.6629
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6.6 A800 V1.9 OhmsN - Channel30 V - 55 C+ 150 C56 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
IPP70N10S3L-12


Infineon Technologies MOSFET N-Ch 100V 70A TO220-3 OptiMOS-T
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Infineon 329
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AUD 2.4278
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70 A100 V12 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel   Aec - Q101Optimos
FQA16N50_F109


Fairchild Semiconductor MOSFET 500v QFET
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ON Semiconductor 329
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AUD 2.472
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16 A500 V320 mOhmsn - channel     through holeTO - 3P - 3Tubesi1 channel     
R6020KNZC8


MOSFET Nch 600V 20A Si MOSFET
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ROHM 329
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AUD 4.5453
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20 A600 V170 mOhmsN - Channel 3 V- 55 C+ 150 C231 WThrough HoleTO - 3PF - 3TubeSi1 Channel20 V40 nCEnhancement  
IXFH120N15P


MOSFET 120 Amps 150V 0.016 Rds
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IXYS 329
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AUD 10.1955
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120 A150 V16 mOhmsN - Channel 3 V- 55 C+ 175 C600 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V150 nCEnhancement HiPerFET
IXTK102N30P


MOSFET 102 Amps 300V 0.033 Rds
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IXYS 329
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AUD 19.8821
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102 A300 V33 mOhmsn - channel 5 V- 55 C+ 150 C700 Wthrough holeTO - 264 - 3Tubesi1 channel20 V224 nCenhancement polarht
SIHG050N65SF-GE3


MOSFETs N-CHANNEL 650V
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Vishay 310
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AUD 4.5806
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STB6NK90ZT4


MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
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STMicroelectronics 270
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AUD 1.3307
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5.8 A900 V2 OhmsN - Channel 3 V- 55 C+ 150 C140 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel10 V46.5 nCEnhancement Supermesh
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