MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIA519EDJ-T1-GE3


Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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Vishay 334
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AUD 0.5924
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4.5 A20 V40 mOhms , 90 mOhmsN And P - Channel 600 mV , 500 mV- 55 C+ 150 C7.8 w , 7.8 WSmd/SmtPOWERPAK SC - 70 - 6ReelSi2 Channel4.5 v , - 4.5 V3.7 nC , 5.3 nCEnhancement Trenchfet, Powerpak
FCPF16N60


MOSFET 600V N-CH SuperFET
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ON Semiconductor 332
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AUD 4.006
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16 A600 V260 mOhmsN - Channel30 V - 55 C+ 150 C37.9 WThrough HoleTO - 220 - 3Tube    Enhancement  
PSMN1R5-40ES,127


MOSFET N-Ch 40V 1.6 mOhms
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Nexperia 332
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AUD 5.2239
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120 A40 V1.6 mOhmsn - channel 3 V- 55 C+ 175 C338 Wthrough holeTO - 262 - 3Rail/Tubesi1 channel20 V133 nCenhancement  
IPW65R080CFD


MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
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Infineon 332
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AUD 5.3297
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43.3 A650 V72 mOhmsN - Channel 3.5 V- 55 C+ 150 C391 WThrough HoleTO - 247TubeSi1 Channel20 V167 nCEnhancement Coolmos
FCA20N60F


N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-3PN
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ON Semiconductor 332
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AUD 5.697
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20 A600 V150 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Superfet Frfet
WMQ050N03LG4


Transistor: N-MOSFET; unipolar; PDFN3030-8
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Wayon 331
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AUD 0.28
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NCEP023N10T


100V 280A 1.85mΩ@10V,140A 365W 3V@250uA N Channel TO-247-3 MOSFETs ROHS
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NCE Power 331
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AUD 3.7977
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IXFH34N65X3


MOSFET DISCRETE MOSFET 34A 650V X3 TO
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IXYS 331
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AUD 7.5962
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34 A650 V100 OhmsN - Channel 5.2 V- 55 C+ 150 C446 WThrough Hole TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement  
TSF12N65M


MOSFET N Trench 650V 12A (Tc) 5V @ 250uA 750 mΩ @ 6A,10V TO-220F RoHS
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Truesemi 330
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AUD 0.5678
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WMO80N06TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 319
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AUD 0.514
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