MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFPE50PBF


N-Channel 800 V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 6363
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AUD 3.4097
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7.8 A800 V1.2 OhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V200 nCEnhancement  
IPF016N06NF2SATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 5782
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AUD 3.4313
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223 A60 V1.7 mOhmsN - Channel 2.1 V- 55 C+ 175 C188 WSMD/SMTTO - 263 - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V108 nCEnhancement StrongIRFET
ISC024N08NM7ATMA1


MOSFETs OptiMOS 7 PowerTransistor, 80 V
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Infineon 350
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AUD 1.7403
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167 A80 V2.4 mOhmsN - Channel 3.2 V- 55 C+ 175 C150 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V49 nCEnhancement  
Hot FCPF11N60


Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
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ON Semiconductor 350
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AUD 3.0784
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   N Channel               
IXFX360N15T2


MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
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IXYS 350
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AUD 40.0433
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      - 55 C+ 175 C1670 WThrough HolePLUS - 247TubeSi     Hiperfet
IRLML9303TRPBF-HXY


30V 4.1A 48mΩ@10V,3A 1.32W 2.5V@250uA pChannel SOT-23 MOSFETs ROHS
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HXY MOS 349
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AUD 0.0528
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NCEP028N85


TO-220 MOSFETs ROHS
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NCE Power 329
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AUD 1.8799
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CSD16327Q3


N-Channel 25 V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
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Texas Instruments 235
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AUD 1.2906
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   N - Channel  - 55 C+ 150 C Smd/SmtSONReel      Nexfet
SM3416SRL-HXY


20V 6A 14m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 145
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AUD 0.0633
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STH3N150-2


MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
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STMicroelectronics 19
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AUD 2.6466
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2.5 A1.5 kV9 OhmsN - Channel 3 V + 150 C140 WSmd/SmtH2PAK - 2Cut TapeSi1 Channel10 V29.3 nCEnhancement Powermesh
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