MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJQ410EL-T1_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 358
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AUD 5.1147
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135 A100 V2.8 mOhmsN - Channel 1.5 V- 55 C+ 175 C136 WSmd/SmtPOWERPAK - 8X8L - 4Cut TapeSi1 Channel20 V150 nCEnhancementAec - Q101Trenchfet
SI7850DP-T1-GE3


MOSFET 60V 10.3A 4.5W 22mohm @ 10V
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Vishay 356
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AUD 1.4967
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
CSD19503KCS


N-Channel 80 V 100A (Ta) 188W (Tc) Through Hole TO-220-3
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Texas Instruments 356
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AUD 1.9642
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100 A80 V9.2 mOhmsN - Channel 2.8 V- 55 C+ 150 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V28 nCEnhancement Nexfet
IPA60R520E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
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Infineon 355
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AUD 1.1998
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            coolmos e6      
BSZ16DN25NS3 G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 355
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AUD 1.2248
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10.9 A250 V146 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V11.4 nCEnhancement Optimos
SI6435ADQ-T1


20V 7.8A 1.05W 10mO@4.5V,8A P Channel TSSOP-8 MOSFETs ROHS
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VBsemi Elec 355
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AUD 0.8118
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SPP06N80C3


MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
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Infineon 355
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AUD 1.187
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6 A800 V900 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WThrough HolePG - TO - 220 - 3TubeSi1 Channel10 V31 nCEnhancement Coolmos
AOT296L


Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220
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Alpha & Omega 344
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AUD 2.2149
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CS25N50ANR


500V 25A 0.21Ω@10V,12.5A 300W 4V@250uA 10pF@25V N Channel 3487pF@25V 64nC@10V -55℃~+150℃@(Tj) TO-3P MOSFETs ROHS
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CRMICRO 308
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AUD 1.5793
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RD3L04BBKHRBTL


MOSFETs Nch 60V 40A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 0
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AUD 0.8636
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40 A60 V13.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C53 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancement  
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