MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4019PBF


MOSFET N Trench 150V 17A 4.9V @ 50uA 95 mΩ @ 10A,10V TO-220 (TO-220-3) RoHS
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Infineon 20516
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AUD 0.9528
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
R8006KNXC7G


MOSFET High-speed Switching Nch 800V 6A Power MOSFET
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ROHM 361
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AUD 2.6433
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6 A800 V900 mOhmsN - Channel 4.5 V- 55 C+ 150 C52 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V22 nCEnhancement  
IPQC60T010S7XTMA1


MOSFETs CoolMOS S7T with embedded temperature sensor
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Infineon 361
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AUD 24.8731
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174 A600 V10 mOhmsN - Channel 4 V- 55 C+ 150 C694 WSMD/SMTPG - HDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V318 nCEnhancement CoolMOS
FDP86363_F085


Fairchild Semiconductor MOSFET
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ON Semiconductor 360
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AUD 1.6051
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110 A80 V2.8 mOhmsN - Channel 3 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel+/- 20 V131 nCEnhancement Powertrench
AGMH4012A


PDFN-8(5x6) MOSFETs ROHS
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AGM-Semi 359
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AUD 0.9736
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NTH4LN067N65S3H


MOSFET SUPERFET3 FAST 67MOHM TO-247-4
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ON Semiconductor 359
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AUD 9.3254
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40 A650 V67 mOhmsN - Channel 4 V- 55 C+ 150 C266 WThrough Hole TubeSi1 Channel- 30 V , + 30 V80 nCEnhancement  
ST3427SRG


3A 1.25W P Channel - MOSFETs ROHS
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STANSON Tech 358
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AUD 0.0334
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NCEP15T14T


TO-247 MOSFETs ROHS
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NCE Power 351
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AUD 3.353
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IPP60R190P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
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Infineon 350
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AUD 1.9851
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            Coolmos P6      
DMP4051LK3-13


MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL
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Diodes Incorporated 215
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AUD 0.4242
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10.5 A40 V51 mOhmsP - Channel 1 V- 55 C+ 150 C8.9 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V14 nCEnhancement  
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