MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WGF12N70SE


TO-220F MOSFETs ROHS
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Wild Goose 351
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.4606

Multiples of: 1

                   
FDP8442_F085


Fairchild Semiconductor MOSFET 40V80A2.8ohmN-CH POWERTRENCH
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ON Semiconductor 351
Ships to you
between Fri. 07 Aug to Tue. 11 Aug
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AUD 2.2692

Multiples of: 1

23 A40 V3.1 mOhmsN - Channel20 V - 55 C+ 175 C254 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
Hot PHP29N08T,127


Trans MOSFET N-CH 75V 27A 3-Pin(3+Tab) TO-220AB Rail
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Nexperia 351
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between Mon. 03 Aug to Fri. 07 Aug
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AUD 2.3554

Multiples of: 1

27 A75 V50 mOhmsN - Channel  - 55 C+ 175 C88 WThrough HoleTO - 220 - 3Rail/TubeSi1 Channel30 V Enhancement  
DMN2013UFDE-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 350
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 0.3907

Multiples of: 1

10.5 A20 V8.4 mOhmsN - Channel 500 mV- 55 C+ 150 C660 mWSmd/SmtU - DFN2020 - E - 6Tape And ReelSi1 Channel8 V25.8 nCEnhancement  
VBZA4425


30V 7A 23mO@10V,7A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 350
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.4679

Multiples of: 1

                   
STD10N60M2


MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II
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STMicroelectronics 350
Ships to you
between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.6937

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7.5 A600 V560 mOhmsN - Channel25 V3 V- 55 C+ 150 C85 WSmd/SmtDPAK - 2ReelSi1 Channel25 V13.5 nC  Mdmesh
HY4903B6


MOSFET N Trench 30V 314A (Tc) 3V @ 250uA 1.7 mΩ @ 150A,10V TO-263-6L RoHS
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HUAYI 350
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 1.0359

Multiples of: 1

                   
IPA80R1K2P7XKSA1


MOSFET LOW POWER_NEW
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Infineon 350
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 1.169

Multiples of: 1

4.5 A800 V1 OhmsN - Channel 2.5 V- 55 C+ 150 C25 WThrough HolePG - TO - 220FP - 3TubeSi1 Channel20 V11 nCEnhancement Coolmos
STF3NK80Z


Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP
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STMicroelectronics 346
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between Mon. 03 Aug to Fri. 07 Aug
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AUD 1.0657

Multiples of: 1

            Supermesh      
BUK7Y1R0-40NX


MOSFETs BUK7Y1R0-40N/SOT669/LFPAK
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Nexperia 334
Ships to you
between Fri. 07 Aug to Tue. 11 Aug
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AUD 1.3512

Multiples of: 1

320 A40 V970 uOhmsN - Channel 3.6 V- 55 C+ 175 C268 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V135 nCEnhancement  
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